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Machine translation
1. (WO2011017598) FORMATION OF SILICON OXIDE USING NON-CARBON FLOWABLE CVD PROCESSES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/017598    International Application No.:    PCT/US2010/044680
Publication Date: 10.02.2011 International Filing Date: 06.08.2010
IPC:
H01L 21/316 (2006.01), H01L 21/205 (2006.01)
Applicants: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, California 95054 (US) (For All Designated States Except US).
LIANG, Jingmei [CN/US]; (US) (For US Only).
INGLE, Nitin, K. [US/US]; (US) (For US Only).
VENKATARAMAN, Shankar [US/US]; (US) (For US Only)
Inventors: LIANG, Jingmei; (US).
INGLE, Nitin, K.; (US).
VENKATARAMAN, Shankar; (US)
Agent: BERNARD, Eugene, J.; Townsend and Townsend and Crew LLP 1400 Wewatta St., Suite 600 Denver, Colorado 80202 (US)
Priority Data:
61/231,729 06.08.2009 US
Title (EN) FORMATION OF SILICON OXIDE USING NON-CARBON FLOWABLE CVD PROCESSES
(FR) FORMATION D'OXYDE DE SILICIUM EN UTILISANT DES PROCÉDÉS CVD FLUIDES NON-CARBONE
Abstract: front page image
(EN)A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-and-nitrogen containing precursor with a radical precursor, and depositing a silicon-and-nitrogen containing layer on a substrate. The silicon-and-nitrogen containing layer is then converted to the silicon oxide layer.
(FR)La présente invention concerne un procédé de formation d'une couche d'oxyde de silicium. Le procédé peut comprendre les étapes de mélange d'un précurseur contenant du silicium et de l'azote sans carbone avec un précurseur de radical, et le dépôt d'une couche contenant du silicium et de l'azote sur un substrat. La couche contenant du silicium et de l'azote est ensuite convertie en couche d'oxyde de silicium.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)