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1. (WO2011016490) STACKED PHOTOVOLTAIC ELEMENT AND METHOD FOR PRODUCING STACKED PHOTOVOLTAIC ELEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/016490    International Application No.:    PCT/JP2010/063200
Publication Date: 10.02.2011 International Filing Date: 04.08.2010
IPC:
H01L 31/04 (2006.01)
Applicants: SHARP KABUSHIKI KAISHA [JP/JP]; 22-22, Nagaike-cho, Abeno-ku, Osaka-shi, Osaka 5458522 (JP) (For All Designated States Except US).
HIGASHIKAWA, Makoto; (For US Only).
SHIMIZU, Takako; (For US Only).
HONDA, Shinya; (For US Only).
ISHIKAWA, Yasuaki; (For US Only).
SANO, Yuichi; (For US Only)
Inventors: HIGASHIKAWA, Makoto; .
SHIMIZU, Takako; .
HONDA, Shinya; .
ISHIKAWA, Yasuaki; .
SANO, Yuichi;
Agent: Fukami Patent Office, p.c.; Nakanoshima Central Tower, 2-7, Nakanoshima 2-chome, Kita-ku, Osaka-shi, Osaka 5300005 (JP)
Priority Data:
2009-182411 05.08.2009 JP
Title (EN) STACKED PHOTOVOLTAIC ELEMENT AND METHOD FOR PRODUCING STACKED PHOTOVOLTAIC ELEMENT
(FR) ELÉMENT PHOTOVOLTAÏQUE SUPERPOSÉ ET PROCÉDÉ DE PRODUCTION D'UN ÉLÉMENT PHOTOVOLTAÏQUE SUPERPOSÉ
(JA) 積層型光起電力素子および積層型光起電力素子の製造方法
Abstract: front page image
(EN)Disclosed is a stacked photovoltaic element that is provided with a first photovoltaic element unit (3) that is layered on a substrate (1) and that contains at least one photovoltaic element, a hollow layer (7) that is layered on the first photovoltaic element unit (3) and that comprises a metal oxide, an amorphous buffer layer (8) that is layered on the hollow layer (7), and a second photovoltaic element unit (5) that is layered on the buffer layer (8) and that contains at least one photovoltaic element; and a conductive layer (5a) that contacts the abovementioned buffer layer (8) of the abovementioned second photovoltaic element unit (5) is a microcrystalline layer.
(FR)La présente invention a trait à un élément photovoltaïque superposé qui est équipé d'une première unité d'élément photovoltaïque (3) qui est stratifiée sur un substrat (1) et qui contient au moins un élément photovoltaïque, d'une couche creuse (7) qui est stratifiée sur la première unité d'élément photovoltaïque (3) et qui comprend un oxyde métallique, d'une couche tampon amorphe (8) qui est stratifiée sur la couche creuse (7), et d'une seconde unité d'élément photovoltaïque (5) qui est stratifiée sur la couche tampon (8) et qui contient au moins un élément photovoltaïque; et d'une couche conductrice (5a) qui est en contact avec ladite couche tampon (8) de ladite seconde unité d'élément photovoltaïque (5) qui est une couche microcristalline.
(JA) 基板(1)上に積層された、少なくとも1つの光起電力素子を含む第1の光起電力素子部(3)と、第1の光起電力素子部(3)上に積層された金属酸化物からなる中間層(7)と、中間層(7)上に積層されたアモルファス状態のバッファ層(8)と、バッファ層(8)上に積層された、少なくとも1つの光起電力素子を含む第2の光起電力素子部(5)とを備え、上記第2の光起電力素子部(5)の上記バッファ層(8)と接する導電層(5a)は微結晶層である、積層型光起電子力素子である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)