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1. (WO2011016283) SEMICONDUCTOR POWDER AND PROCESS FOR PRODUCING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/016283    International Application No.:    PCT/JP2010/059438
Publication Date: 10.02.2011 International Filing Date: 03.06.2010
IPC:
C01G 19/00 (2006.01), C01G 45/00 (2006.01), C01G 49/00 (2006.01), C01G 51/00 (2006.01), C01G 53/11 (2006.01), H01L 21/368 (2006.01)
Applicants: MITSUI MINING & SMELTING CO., LTD. [JP/JP]; 11-1, Osaki 1-chome, Shinagawa-ku, Tokyo 1418584 (JP) (For All Designated States Except US).
MITSUMOTO Tetsuya [JP/JP]; (JP) (For US Only).
ANNO Yuichi [JP/JP]; (JP) (For US Only)
Inventors: MITSUMOTO Tetsuya; (JP).
ANNO Yuichi; (JP)
Agent: KATSUNUMA Hirohito; Kyowa Patent & Law Office, Room 323, Fuji Bldg., 2-3, Marunouchi 3-chome, Chiyoda-ku, Tokyo 1000005 (JP)
Priority Data:
2009-183412 06.08.2009 JP
Title (EN) SEMICONDUCTOR POWDER AND PROCESS FOR PRODUCING SAME
(FR) POUDRE SEMI-CONDUCTRICE ET SON PROCÉDÉ DE PRODUCTION
(JA) 半導体粉末およびその製造方法
Abstract: front page image
(EN)Provided are a semiconductor powder which is constituted of a single-phase Cu-M-Sn-S (wherein M is at least one element selected from Zn, Co, Ni, Fe, and Mn) and was obtained by wet synthesis and a process for producing the semiconductor powder. With this process, it is possible to easily provide a single-phase Cu-M-Sn-S semiconductor powder of a high grade, including CZTS.
(FR)Cette invention concerne une poudre semi-conductrice qui est constituée d'une monophase de Cu-M-Sn-S (M étant au moins un élément choisi parmi Zn, Co, Ni, Fe, et Mn) et a été obtenue par synthèse par voie humide et un procédé de production de ladite poudre semi-conductrice. Le procédé selon l'invention permet de produire facilement une poudre semi-conductrice Cu-M-Sn-S monophasique de qualité élevée, comprenant CZTS.
(JA) 本発明は、単相のCu-M-Sn-S(式中、Mは、Zn、Co、Ni、FeおよびMnから選択される少なくとも1種である)からなり、湿式合成により得られた、半導体粉末およびその製造方法を提供するものである。本発明によれば、CZTSを始めとする、単相のCu-M-Sn-S半導体粉末を簡便かつ高品位に提供することができる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)