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1. (WO2011015775) HYBRID SOLAR ENERGY COLLECTOR, AND SOLAR POWER PLANT INCLUDING AT LEAST ONE SUCH COLLECTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/015775    International Application No.:    PCT/FR2010/051630
Publication Date: 10.02.2011 International Filing Date: 30.07.2010
IPC:
H01L 31/058 (2006.01), H01L 31/0304 (2006.01), H01L 31/0392 (2006.01), H01L 31/052 (2006.01)
Applicants: AREVA [FR/FR]; 33 rue La Fayette F-75009 Paris (FR) (For All Designated States Except US).
MOUSSAVI, Mehdi [FR/FR]; (FR) (For US Only)
Inventors: MOUSSAVI, Mehdi; (FR)
Agent: BLOT, Philippe; Cabinet Lavoix 2, Place d'Estienne d'Orves F-75441 Paris Cedex 09 (FR)
Priority Data:
09 55460 03.08.2009 FR
Title (EN) HYBRID SOLAR ENERGY COLLECTOR, AND SOLAR POWER PLANT INCLUDING AT LEAST ONE SUCH COLLECTOR
(FR) COLLECTEUR D'ÉNERGIE SOLAIRE HYBRIDE ET CENTRALE SOLAIRE COMPRENANT AU MOINS UN TEL COLLECTEUR
Abstract: front page image
(EN)The invention relates to a collector including at least one photovoltaic cell for converting solar energy into electric energy, and at least one heat sink (6) for converting solar energy into heat energy by heating a fluid, arranged so as to receive solar energy through the photovoltaic cell (4). According to one form of the invention, the photovoltaic cell (4) includes a plurality of vertically adjacent semiconductor junctions having different forbidden energy bands, each semiconductor junction having a forbidden energy band of greater than or equal to 1.2 eV, in particular greater than or equal to 1.4 eV.
(FR)Ce collecteur est du type comprenant au moins une cellule photovoltaïque (4) pour la conversion d'énergie solaire en énergie électrique et au moins un receveur thermique (6) pour la conversion d'énergie solaire en énergie thermique par chauffage d'un fluide, disposé de façon à recevoir de l'énergie solaire au travers de la cellule photovoltaïque (4), Selon un aspect de l'invention, la cellule photovoltaïque (4) comprend plu- sieurs jonctions semi-conductrices superposées ayant des largeurs de bandes interdite différentes, chaque jonction semi-conductrice ayant une largeur de bande interdite égale ou supérieure à 1.2 e V, notamment égale ou supérieure à 1.4 e V.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: French (FR)
Filing Language: French (FR)