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1. (WO2011013600) SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/013600    International Application No.:    PCT/JP2010/062491
Publication Date: 03.02.2011 International Filing Date: 26.07.2010
IPC:
H01L 21/336 (2006.01), G02F 1/1368 (2006.01), H01L 21/28 (2006.01), H01L 21/283 (2006.01), H01L 21/312 (2006.01), H01L 21/316 (2006.01), H01L 29/423 (2006.01), H01L 29/49 (2006.01), H01L 29/786 (2006.01)
Applicants: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY [JP/JP]; 1-1, Katahira 2-chome, Aoba-ku, Sendai-shi, Miyagi 9808577 (JP) (For All Designated States Except US).
OHMI, Tadahiro [JP/JP]; (JP) (For US Only)
Inventors: OHMI, Tadahiro; (JP)
Agent: IKEDA, Noriyasu; Hibiya Daibiru Bldg., 2-2, Uchisaiwaicho 1-chome, Chiyoda-ku, Tokyo 1000011 (JP)
Priority Data:
2009-178533 31.07.2009 JP
2010-024786 05.02.2010 JP
Title (EN) SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE
(FR) DISPOSITIF SEMI-CONDUCTEUR, PROCÉDÉ DE FABRICATION D'UN DISPOSITIF SEMI-CONDUCTEUR ET DISPOSITIF D'AFFICHAGE
(JA) 半導体装置、半導体装置の製造方法、及び表示装置
Abstract: front page image
(EN)Disclosed is a semiconductor device which is characterized by comprising: a gate electrode that is provided on a substrate and contains Al or an Al alloy; a gate insulating film that is so formed as to cover at least the upper surface of the gate electrode and contains an anodic oxide film that is obtained by anodizing the Al or Al alloy of the gate electrode; and an insulator layer that is so formed on the substrate as to surround the gate electrode and has a thickness that is substantially equal to the total of the thickness of the gate electrode and the thickness of the gate insulating film formed on the upper surface of the gate electrode.
(FR)L'invention concerne un dispositif semi-conducteur caractérisé en ce qu'il comprend: une électrode grille placée sur un substrat et contenant de l'aluminium ou un alliage d'aluminium, ; un film d'isolation de grille destiné à recouvrir au moins la surface supérieure de l'électrode grille et contenant un film d'oxyde anodique obtenu par anodisation de l'aluminium ou de l'alliage d'aluminium de l'électrode grille, et une couche isolante formée sur le substrat de manière à entourer l'électrode de grille et possédant une épaisseur sensiblement égale au total de l'épaisseur de l'électrode grille et de l'épaisseur du film d'isolation de grille formé sur la surface supérieure de l'électrode grille.
(JA) 基板上に設けられたAlまたはAl合金を含むゲート電極と、該ゲート電極の少なくとも上面を覆うように設けられ該ゲート電極のAlまたはAl合金を陽極酸化した陽極酸化膜を含むゲート絶縁膜と、前記ゲート電極の厚さおよびその上面のゲート絶縁膜の厚さの合計厚さと実質的に等しい厚さを有し前記ゲート電極を取り囲むように前記基板上に設けられた絶縁体層とを含むことを特徴とする半導体装置が得られる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)