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1. WO2011013471 - SINTERED CU-GA SPUTTERING TARGET AND METHOD FOR PRODUCING THE TARGET

Publication Number WO/2011/013471
Publication Date 03.02.2011
International Application No. PCT/JP2010/061049
International Filing Date 29.06.2010
IPC
C23C 14/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
B22F 1/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
1Special treatment of metallic powder, e.g. to facilitate working, to improve properties; Metallic powders per se, e.g. mixtures of particles of different composition
B22F 3/14 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
3Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor
12Both compacting and sintering
14simultaneously
B22F 9/04 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
9Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor
02using physical processes
04starting from solid material, e.g. by crushing, grinding or milling
B22F 9/08 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
9Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor
02using physical processes
06starting from liquid material
08by casting, e.g. through sieves or in water, by atomising or spraying
C22C 1/04 2006.01
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
1Making non-ferrous alloys
04by powder metallurgy
CPC
B22F 2998/00
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER
2998Supplementary information concerning processes or compositions relating to powder metallurgy
B22F 3/14
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER
3Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; ; Presses and furnaces
12Both compacting and sintering
14simultaneously
C22C 1/0425
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
1Making alloys
04by powder metallurgy
0425Copper-based alloys
C22C 28/00
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
28Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
C22C 30/02
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
30Alloys containing less than 50% by weight of each constituent
02containing copper
C22C 9/00
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
9Alloys based on copper
Applicants
  • JX日鉱日石金属株式会社 JX Nippon Mining & Metals Corporation [JP]/[JP] (AllExceptUS)
  • 生澤 正克 IKISAWA Masakatsu [JP]/[JP] (UsOnly)
  • 高見 英生 TAKAMI Hideo [JP]/[JP] (UsOnly)
  • 田村 友哉 TAMURA Tomoya [JP]/[JP] (UsOnly)
Inventors
  • 生澤 正克 IKISAWA Masakatsu
  • 高見 英生 TAKAMI Hideo
  • 田村 友哉 TAMURA Tomoya
Agents
  • 小越 勇 OGOSHI Isamu
Priority Data
2009-17425327.07.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SINTERED CU-GA SPUTTERING TARGET AND METHOD FOR PRODUCING THE TARGET
(FR) CIBLE DE PULVÉRISATION CATHODIQUE EN CU-GA FRITTÉE ET PROCÉDÉ POUR PRODUCTION DE LA CIBLE
(JA) Cu-Ga焼結体スパッタリングターゲット及び同ターゲットの製造方法
Abstract
(EN)
Disclosed is a sintered Cu-Ga alloy sputtering target which is characterized by being composed of a sintered body of a Cu-Ga alloy powder that has a Ga concentration of 20-60 at% with the balance made up of Cu and unavoidable impurities. The sintered Cu-Ga alloy sputtering target is also characterized in that the sintered body has a relative density of not less than 97%, an average crystal grain size of 5-30 μm and a flexural strength of not less than 150 MPa. The Cu-Ga target is free from compositional segregation, and has low brittleness and a high Ga concentration of 25-45 at%. Also disclosed is a method for producing the Cu-Ga target. Since the sintered Cu-Ga alloy sputtering target improves the yields of target production and CIGS solar cell production and thus can reduce the production cost of a CIGS solar cell, the sintered Cu-Ga alloy sputtering target is useful as a material for CIGS solar cell production by a selenization method.
(FR)
L'invention porte sur une cible de pulvérisation cathodique en alliage de Cu-Ga fritté, laquelle cible est caractérisée en ce qu'elle est composée d'un corps fritté d'une poudre d'alliage de Cu-Ga qui a une concentration en Ga de 20 à 60 % atomiques, le reste étant constitué par du Cu et des impuretés inévitables. La cible de pulvérisation cathodique en alliage de Cu-Ga fritté est également caractérisée en ce que le corps fritté a une densité relative qui n'est pas inférieure à 97 %, une taille de grain de cristal moyenne de 5 à 30 µm, et une résistance à la flexion qui n'est pas inférieure à 150 MPa. La cible en Cu-Ga est exempte d'une ségrégation de composition, et a une faible fragilité et une concentration en Ga élevée, de 25 à 45 % atomiques. L'invention porte également sur un procédé pour produire la cible en Cu-Ga. Comme la cible de pulvérisation cathodique en alliage de Cu-Ga fritté améliore les rendements de production de cibles et de production de piles solaires au séléniure de cuivre-indium-gallium, et peut par conséquent réduire le coût de production d'une pile solaire au séléniure de cuivre-indium-gallium, la cible de pulvérisation cathodique en alliage de Cu-Ga fritté est utile comme matériau pour la production de piles solaires au séléniure de cuivre-indium-gallium par un procédé de sélénisation.
(JA)
Ga濃度が20~60at%、残部がCu及び不可避的不純物であるCu-Ga合金粉末の焼結体からなり、該焼結体の相対密度が97%以上、平均結晶粒径が5~30μmであり、さらに抗折力が150Mpa以上であることを特徴とするCu-Ga合金焼結体スパッタリングターゲット。組成偏析がなく、脆性が少ないGa濃度が25~45at%の高Ga濃度のCu-Gaターゲット及びその製造方法を提供することができ、ターゲット製造及びCIGS系太陽電池製造の歩留まりが向上し、製造コストが低減できるので、セレン化法によるCIGS系太陽電池の製造用材料として有用である。
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