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1. WO2011011764 - SYSTEMS, METHODS AND MATERIALS INVOLVING CRYSTALLIZATION OF SUBSTRATES USING A SEED LAYER, AS WELL AS PRODUCTS PRODUCED BY SUCH PROCESSES

Publication Number WO/2011/011764
Publication Date 27.01.2011
International Application No. PCT/US2010/043164
International Filing Date 23.07.2010
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 31/042 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
042PV modules or arrays of single PV cells
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
CPC
H01L 21/02422
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02422Non-crystalline insulating materials, e.g. glass, polymers
H01L 21/02529
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02529Silicon carbide
H01L 21/02532
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02532Silicon, silicon germanium, germanium
H01L 21/02675
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02656Special treatments
02664Aftertreatments
02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
02675using laser beams
H01L 21/02691
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02656Special treatments
02664Aftertreatments
02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
02691Scanning of a beam
H01L 27/1277
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
127with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
1274using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
1277using a crystallisation promoting species, e.g. local introduction of Ni catalyst
Applicants
  • GIGASI SOLAR, INC. [US]/[US] (AllExceptUS)
  • PRABHAKAR, Venkatraman [US]/[US] (UsOnly)
Inventors
  • PRABHAKAR, Venkatraman
Agents
  • SCHWAAB, Andrew, B.
Priority Data
61/271,70723.07.2009US (Priority Withdrawn 23.01.2012)
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SYSTEMS, METHODS AND MATERIALS INVOLVING CRYSTALLIZATION OF SUBSTRATES USING A SEED LAYER, AS WELL AS PRODUCTS PRODUCED BY SUCH PROCESSES
(FR) SYSTÈMES, PROCÉDÉS ET MATIÈRES METTANT EN JEU UNE CRISTALLISATION DE SUBSTRATS À L'AIDE D'UNE COUCHE D'ENSEMENCEMENT, AINSI QUE PRODUITS OBTENUS PAR DE TELS PROCÉDÉS
Abstract
(EN)
Systems, methods, and products of processes consistent with the innovations herein relate to aspects involving crystallization of layers on substrates. In one exemplary implementation, there is provided a method of fabricating a device. Moreover, such method may include placing a seed layer on a base substrate, covering the seed layer with an amorphous/poly material, and heating the seed layer/material to transform the material into crystalline form.
(FR)
Les systèmes, procédés et produits de procédés selon la présente invention concernent des aspects mettant en jeu une cristallisation de couches sur des substrats. Dans un mode de réalisation à titre d'exemple, il est proposé un procédé de fabrication d'un dispositif. De plus, un tel procédé peut comprendre la mise en place d'une couche d'ensemencement sur un substrat de base, le recouvrement de la couche d'ensemencement par une matière amorphe/poly et le chauffage de la couche d'ensemencement/matière pour transformer la matière en une forme cristalline.
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