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1. WO2011010727 - THERMAL CVD DEVICE, SIO2 FILM OR SIOF FILM AND METHOD FOR FORMING SAID FILMS

Publication Number WO/2011/010727
Publication Date 27.01.2011
International Application No. PCT/JP2010/062448
International Filing Date 23.07.2010
Chapter 2 Demand Filed 24.05.2011
IPC
C23C 16/42 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
42Silicides
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
H01L 21/316 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
316composed of oxides or glassy oxides or oxide-based glass
CPC
C23C 16/402
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
401containing silicon
402Silicon dioxide
C23C 16/45561
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45561Gas plumbing upstream of the reaction chamber
H01L 21/02131
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02126the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
02131the material being halogen doped silicon oxides, e.g. FSG
H01L 21/02164
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02164the material being a silicon oxide, e.g. SiO2
H01L 21/02219
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02205the layer being characterised by the precursor material for deposition
02208the precursor containing a compound comprising Si
02219the compound comprising silicon and nitrogen
H01L 21/02271
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
Applicants
  • 株式会社ユーテック YOUTEC CO., LTD. [JP]/[JP] (AllExceptUS)
  • 早川 晴仁 HAYAKAWA Haruhito [JP]/[JP] (UsOnly)
Inventors
  • 早川 晴仁 HAYAKAWA Haruhito
Agents
  • 柳瀬 睦肇 YANASE Mutsuyasu
Priority Data
2009-17327024.07.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) THERMAL CVD DEVICE, SIO2 FILM OR SIOF FILM AND METHOD FOR FORMING SAID FILMS
(FR) DISPOSITIF CVD THERMIQUE, FILM DE SIO2 OU FILM DE SIOF ET PROCÉDÉ DE FORMATION DESDITS FILMS
(JA) 熱CVD装置、SiO2膜又はSiOF膜及びその成膜方法
Abstract
(EN)
Provided is a thermal CVD device wherein it is possible to prevent the film quality of SiO2 films or SiOF films from deteriorating by using a raw material gas that does not contain hydrogen. The thermal CVD device is provided with: a chamber (1); a stage (4) which is disposed within the chamber and which holds a substrate (6) whereupon a film is to be formed; a gas shower supplying member (3) which is disposed within the chamber and in a position facing the substrate that is held by the stage; a heating mechanism (5) for heating the substrate held by the stage; a raw material gas supplying mechanism for supplying raw material gas into the chamber; an oxidizing gas supplying mechanism for supplying oxidizing gas into the chamber; and an exhaust mechanism for exhausting the chamber. The raw material gas comprises a Si material that does not contain hydrogen.
(FR)
Grâce à un dispositif CVD thermique d'après la présente invention, il est possible d'éviter que la qualité de films de SiO2 ou de SiOF ne se dégrade en utilisant un gaz servant de matière première ne contenant pas d'hydrogène. Le dispositif CVD thermique comprend : une chambre (1); un étage (4) disposé à l'intérieur de la chambre et maintenant un substrat (6) sur lequel un film doit être formé; un élément d'alimentation de rinceur à gaz (3) disposé à l'intérieur de la chambre dans une position en regard du substrat maintenu par l'étage; un mécanisme de chauffage (5) permettant de chauffer le substrat maintenu par l'étage; un mécanisme d'alimentation en gaz servant de matière première permettant d'alimenter la chambre en gaz servant de matière première; un mécanisme d'alimentation en gaz comburant permettant d'alimenter la chambre en gaz comburant; et un mécanisme de mise sous vide permettant de mettre sous la chambre. Le gaz servant de matière première comprend une matière en Si dépourvue d'hydrogène.
(JA)
 水素を含まない原料ガスを用いることによりSiO膜又はSiOF膜の膜質の劣化を抑制できる熱CVD装置を提供する。本発明に係る熱CVD装置は、チャンバー1と、前記チャンバー内に配置され、被成膜基板6が保持されるステージ4と、前記チャンバー内に配置され、前記ステージに保持された前記被成膜基板に対向して配置されるガスシャワー供給部材3と、前記ステージに保持された前記被成膜基板を加熱する加熱機構5と、前記チャンバー内に原料ガスが供給される原料ガス供給機構と、前記チャンバー内に酸化ガスが供給される酸化ガス供給機構と、前記チャンバー内を排気する排気機構と、を具備し、前記原料ガスは、水素を含まないSi系材料を有することを特徴とする。
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