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1. WO2011010603 - TARGET FOR ZnO-BASED TRANSPARENT CONDUCTIVE FILM AND METHOD FOR PRODUCING SAME

Publication Number WO/2011/010603
Publication Date 27.01.2011
International Application No. PCT/JP2010/061997
International Filing Date 15.07.2010
IPC
C23C 14/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C04B 35/453 2006.01
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04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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35Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
01based on oxides
453based on zinc, tin or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
H01L 31/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
CPC
C04B 2235/3217
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04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3217Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
C04B 2235/3239
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2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
3239Vanadium oxides, vanadates or oxide forming salts thereof, e.g. magnesium vanadate
C04B 2235/3286
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2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3286Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
C04B 2235/3409
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2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
34Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3409Boron oxide, borates, boric acids, or oxide forming salts thereof, e.g. borax
C04B 2235/5409
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2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
54Particle size related information
5409expressed by specific surface values
C04B 2235/656
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04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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2235Aspects relating to ceramic starting mixtures or sintered ceramic products
65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
656characterised by specific heating conditions during heat treatment
Applicants
  • 日立金属株式会社 HITACHI METALS, LTD. [JP]/[JP] (AllExceptUS)
  • 福島 英子 FUKUSHIMA Hideko [JP]/[JP] (UsOnly)
Inventors
  • 福島 英子 FUKUSHIMA Hideko
Priority Data
2009-16975921.07.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) TARGET FOR ZnO-BASED TRANSPARENT CONDUCTIVE FILM AND METHOD FOR PRODUCING SAME
(FR) CIBLE POUR FILM CONDUCTEUR TRANSPARENT À BASE DE ZnO ET SON PROCÉDÉ DE PRODUCTION
(JA) ZnO系透明導電膜用ターゲットおよびその製造方法
Abstract
(EN)
Disclosed is a target for a ZnO-based transparent conductive film, which has a high sintered density and to which both boron (B) and vanadium (V) are added. Also disclosed is a method for producing the target for a ZnO-based transparent conductive film. The target for a ZnO-based transparent conductive film is composed of an oxide sintered body wherein the boron content in terms of oxide, which is calculated as B2O3/(ZnO + B2O3 + V2O3) × 100, is 0.5-10 mass%, the vanadium content in terms of oxide, which is calculated as V2O3/(ZnO + B2O3 + V2O3) × 100, is 0.05-5 mass%, and the density expressed as a relative density is not less than 90%. The method for producing the target for a ZnO-based transparent conductive film is characterized in that a H3BO3 powder is used as a boron source and a V2O3 powder is used as a vanadium source. In the production method, it is preferable to sinter a sintering material that is composed of a calcinated powder obtained by mixing a H3BO3 powder and a ZnO powder, optionally together with a V2O3 powder and calcinating the resulting mixture.
(FR)
La présente invention concerne une cible pour un film conducteur transparent à base de ZnO qui présente une forte densité à l'état fritté et à laquelle il est ajouté du bore (B) et du vanadium (V). La présente invention concerne également un procédé de production de la cible pour un film conducteur transparent à base de ZnO. La cible pour un film conducteur transparent à base de ZnO est composée d'un corps fritté à base d'oxyde ayant une teneur en bore exprimée en termes d'oxyde de 0,5 à 10 % en masse, teneur calculée selon B2O3/(ZnO + B2O3 + V2O3) × 100, une teneur en vanadium de 0,05 à 5 % en masse, teneur calculée selon V2O3/(ZnO + B2O3 + V2O3) × 100, et une densité exprimée à titre de densité relative supérieure ou égale à 90 %. Le procédé de production de la cible pour un film conducteur transparent à base de ZnO est caractérisé en ce qu'une poudre de H3BO3 est utilisée à titre de source de bore et en ce qu'une poudre de V2O3 est utilisée à titre de source de vanadium. Dans le procédé de production, il est préférable de fritter un matériau de frittage composé d'une poudre calcinée obtenue en mélangeant une poudre de H3BO3 à une poudre de ZnO, et éventuellement à une poudre de V2O3, puis en calcinant le mélange obtenu.
(JA)
 高い焼結密度を有するホウ素(B)およびバナジウム(V)を両方添加したZnO系透明導電膜用ターゲットおよびその製造方法を提供する。 本発明のターゲットは、ホウ素量が、B/(ZnO+B+V)×100とした酸化物換算で0.5~10mass%、バナジウム量が、V/(ZnO+B+V)×100とした酸化物換算で0.05~5mass%であり、その密度が相対密度で90%以上の酸化物焼結体であるZnO系透明導電膜用ターゲットであり、本発明の製造方法は、ホウ素源としてHBO粉末、バナジウム源としてV粉末を用いることを特徴する。製造方法においてHBO粉末と、ZnO粉末あるいは更にV粉末とを混合し、仮焼きして得た仮焼き粉末を焼結原料として焼結することが好ましい。
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