Processing

Please wait...

PATENTSCOPE will be unavailable a few hours for maintenance reason on Saturday 31.10.2020 at 7:00 AM CET
Settings

Settings

Goto Application

1. WO2011010542 - SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Publication Number WO/2011/010542
Publication Date 27.01.2011
International Application No. PCT/JP2010/061298
International Filing Date 25.06.2010
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
G02F 1/1368 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
1368in which the switching element is a three-electrode device
G09F 9/30 2006.01
GPHYSICS
09EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30in which the desired character or characters are formed by combining individual elements
H01L 21/8234 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
H01L 27/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
H01L 27/088 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
CPC
H01L 27/1225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1222with a particular composition, shape or crystalline structure of the active layer
1225with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
H01L 27/124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
124with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Applicants
  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP]/[JP] (AllExceptUS)
  • YAMAZAKI, Shunpei [JP]/[JP] (UsOnly)
  • SAKATA, Junichiro (UsOnly)
  • MIYAKE, Hiroyuki (UsOnly)
  • KUWABARA, Hideaki (UsOnly)
  • KAWAMATA, Ikuko (UsOnly)
Inventors
  • YAMAZAKI, Shunpei
  • SAKATA, Junichiro
  • MIYAKE, Hiroyuki
  • KUWABARA, Hideaki
  • KAWAMATA, Ikuko
Priority Data
2009-17241323.07.2009JP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
(FR) DISPOSITIF À SEMI-CONDUCTEURS ET SON PROCÉDÉ DE FABRICATION
Abstract
(EN)
An object is to increase the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using a metal and a channel layer is formed using an oxide semiconductor, and a driver circuit wiring formed using a metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode and a drain electrode are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor, and a display portion wiring formed using an oxide conductor. The thin film transistors provided in the semiconductor device are formed with a resist mask formed using a multi-tone mask.
(FR)
La présente invention concerne un objet destiné à augmenter le rapport d'ouverture d'un dispositif à semi-conducteurs. Le dispositif à semi-conducteurs comprend une partie circuit d'attaque et une partie affichage (aussi appelée partie pixel) sur le même substrat. La partie circuit d'attaque comprend un transistor à couches minces et canaux gravés pour un circuit d'attaque, dans lequel une électrode source et une électrode drain sont formées à l'aide d'un métal et une couche de canal est formée à l'aide d'un semi-conducteur d'oxyde, ainsi qu'un câblage de circuit d'attaque formé à l'aide d'un métal. La partie affichage comprend un transistor à couches minces de protection de canal pour un pixel, dans lequel une électrode source et une électrode drain sont formées à l'aide d'un conducteur d'oxyde et une couche à semi-conducteurs est formée à l'aide d'un semi-conducteur d'oxyde, ainsi qu'un câblage de partie affichage formé à l'aide d'un conducteur d'oxyde. Les transistors à couches minces du dispositif à semi-conducteurs sont formés à l'aide d'un masque réserve formé grâce à un masque à multiples tons.
Latest bibliographic data on file with the International Bureau