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1. WO2011010527 - COMPOSITION FOR FILM FORMATION, INSULATING FILM, AND SEMICONDUCTOR DEVICE

Publication Number WO/2011/010527
Publication Date 27.01.2011
International Application No. PCT/JP2010/060847
International Filing Date 25.06.2010
IPC
C08F 138/00 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
138Homopolymers of compounds having one or more carbon-to-carbon triple bonds
C08F 136/00 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
136Homopolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds
C08L 49/00 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
49Compositions of homopolymers or copolymers of compounds having one or more carbon-to-carbon triple bonds; Compositions of derivatives of such polymers
H01L 21/312 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
312Organic layers, e.g. photoresist
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
H01L 23/522 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
CPC
H01L 21/02118
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02118carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
H01L 21/02282
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02282liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
H01L 23/5329
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532characterised by the materials
5329Insulating materials
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H01L 2924/12044
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
10Details of semiconductor or other solid state devices to be connected
11Device type
12Passive devices, e.g. 2 terminal devices
1204Optical Diode
12044OLED
Applicants
  • 住友ベークライト株式会社 SUMITOMO BAKELITE COMPANY LIMITED [JP]/[JP] (AllExceptUS)
  • 中嶋 道男 NAKAJIMA Michio [JP]/[JP] (UsOnly)
  • 斎藤 英紀 SAITO Hidenori [JP]/[JP] (UsOnly)
  • 原田 隆博 HARADA Takahiro [JP]/[JP] (UsOnly)
  • 松谷 美帆子 MATSUTANI Mihoko [JP]/[JP] (UsOnly)
  • 多田 昌弘 TADA Masahiro [JP]/[JP] (UsOnly)
  • 中谷 浩司 NAKATANI Koji [JP]/[JP] (UsOnly)
Inventors
  • 中嶋 道男 NAKAJIMA Michio
  • 斎藤 英紀 SAITO Hidenori
  • 原田 隆博 HARADA Takahiro
  • 松谷 美帆子 MATSUTANI Mihoko
  • 多田 昌弘 TADA Masahiro
  • 中谷 浩司 NAKATANI Koji
Agents
  • 朝比 一夫 ASAHI Kazuo
Priority Data
2009-17055721.07.2009JP
2010-03489819.02.2010JP
2010-03528919.02.2010JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) COMPOSITION FOR FILM FORMATION, INSULATING FILM, AND SEMICONDUCTOR DEVICE
(FR) COMPOSITION POUR LA FORMATION D'UN FILM, FILM ISOLANT, ET DISPOSITIF SEMI-CONDUCTEUR
(JA) 膜形成用組成物、絶縁膜および半導体装置
Abstract
(EN)
Disclosed is a composition for film formation which includes a polymerizable compound having a polymerizable functional group, wherein the polymerizable compound has, in the molecule, both a partial structure comprising a cage structure of the adamantane type and a polymerizable reactive group that contributes to polymerization reaction. The polymerizable reactive group comprises an aromatic ring and an ethynyl or vinyl group directly bonded to the aromatic ring. In the polymerizable compound, the number of carbon atoms derived from the aromatic ring is 15-38% relative to the number of carbon atoms of the whole polymerizable compound.
(FR)
La présente invention a pour objet une composition pour la formation d'un film qui comprend un composé polymérisable ayant un groupe fonctionnel polymérisable, le composé polymérisable présentant, dans la molécule, à la fois une structure partielle comprenant une structure de cage du type adamantane et un groupe réactif polymérisable qui contribue à la réaction de polymérisation. Le groupe réactif polymérisable comprend un cycle aromatique et un groupe éthynyle ou vinyle directement lié au cycle aromatique. Dans le composé polymérisable, le nombre d'atomes de carbone provenant du cycle aromatique est de 15 à 38 % par rapport au nombre d'atomes de carbone du composé polymérisable global.
(JA)
 本発明の膜形成用組成物は、重合性の官能基を有する重合性化合物を含む膜形成用組成物であり、前記重合性化合物は、分子内に、アダマンタン型のかご型構造を含む部分構造と、重合反応に寄与する重合性反応基とを有するものである。そして、前記重合性反応基が、芳香環と、当該芳香環に直接結合するエチニル基またはビニル基とを有するものであり、前記重合性化合物において、前記芳香環由来の炭素の数は、当該重合性化合物全体の炭素の数に対して、15%以上、38%以下であるものである。
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