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1. WO2011010389 - METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Publication Number WO/2011/010389
Publication Date 27.01.2011
International Application No. PCT/JP2009/063280
International Filing Date 24.07.2009
Chapter 2 Demand Filed 18.05.2011
IPC
H01S 5/343 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers , multiple quantum well lasers or graded index separate confinement heterostructure lasers
343in AIIIBV compounds, e.g. AlGaAs-laser
CPC
H01S 5/3412
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
341Structures having reduced dimensionality, e.g. quantum wires
3412quantum box or quantum dash
H01S 5/34306
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
343in AIIIBV compounds, e.g. AlGaAs-laser ; , InP-based laser
34306emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
Applicants
  • パイオニア株式会社 PIONEER CORPORATION [JP]/[JP] (AllExceptUS)
  • 沢渡 義規 SAWADO, Yoshinori [JP]/[JP] (UsOnly)
  • 吉沢 勝美 YOSHIZAWA, Katsumi [JP]/[JP] (UsOnly)
Inventors
  • 沢渡 義規 SAWADO, Yoshinori
  • 吉沢 勝美 YOSHIZAWA, Katsumi
Agents
  • 江上 達夫 EGAMI, Tatsuo
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
(FR) PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À SEMI-CONDUCTEURS, ET DISPOSITIF À SEMI-CONDUCTEURS
(JA) 半導体装置の製造方法及び半導体装置
Abstract
(EN)
A method for manufacturing a semiconductor device having a peak wavelength of PL emission of not less than 1.2 μm at a temperature of 300 K.  The method comprises: a first formation step wherein a buffer layer (120) containing GaAs is formed on a semiconductor substrate (110); a second formation step wherein a quantum dot (131) containing InAs is self-formed on the thus-formed buffer layer; and a third formation step wherein a cap layer (140) containing GaAs is so formed as to cover the thus-formed quantum dot.  The second growth temperature at which the cap layer is formed in the third formation step is lower than the first growth temperature at which the quantum dot is self-formed in the second formation step.
(FR)
Cette invention concerne un procédé de fabrication d'un dispositif à semi-conducteurs ayant une longueur d'onde de crête d'émission de photoluminescence supérieure ou égale à 1,2 μm à une température de 300 K. Le procédé de l'invention comprend les étapes suivantes : une première étape de formation d'une couche tampon (120) contenant du GaAs sur un substrat semi-conducteur (110); une deuxième étape de formation automatique d'un point quantique (131) contenant de l'InAs sur la couche tampon ainsi formée ; et une troisième étape de formation dans laquelle une couche superficielle (140) contenant du GaAs est formée de sorte à recouvrir le point quantique ainsi formé. La seconde température de croissance à laquelle est formée la couche superficielle durant la troisième étape de formation, est inférieure à la première température de croissance à laquelle se forme le point quantique durant la deuxième étape de formation.
(JA)
 半導体装置の製造方法は、温度300Kにおいて、PL発光のピーク波長が1.2μm以上となる半導体装置の製造方法である。該製造方法は、半導体基板(110)上に、GaAsを含んでなるバッファ層(120)を形成する第1形成工程と、形成されたバッファ層上に、InAsを含んでなる量子ドット(131)を自己形成させる第2形成工程と、形成された量子ドットを覆うように、GaAsを含んでなるキャップ層(140)を形成する第3形成工程とを備える。第2形成工程において量子ドットを自己形成させる際の温度である第1成長温度よりも、第3形成工程においてキャップ層を形成する際の温度である第2成長温度が低い。
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