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1. WO2011008767 - METHOD OF MAKING DAMASCENE DIODES USING SACRIFICIAL MATERIAL

Publication Number WO/2011/008767
Publication Date 20.01.2011
International Application No. PCT/US2010/041836
International Filing Date 13.07.2010
IPC
H01L 27/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
H01L 27/24 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
CPC
H01L 27/101
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
101including resistors or capacitors only
H01L 27/1021
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
102including bipolar components
1021including diodes only
H01L 27/2409
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, ; e.g. resistance switching non-volatile memory structures
2409comprising two-terminal selection components, e.g. diodes
H01L 27/2463
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, ; e.g. resistance switching non-volatile memory structures
2463Arrangements comprising multiple bistable or multistable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays, details of the horizontal layout
H01L 27/2481
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, ; e.g. resistance switching non-volatile memory structures
2463Arrangements comprising multiple bistable or multistable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays, details of the horizontal layout
2481arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays, details of the vertical layout
H01L 45/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
Applicants
  • SANDISK 3D LLC [US]/[US] (AllExceptUS)
  • MAKALA, Raghuveer [IN]/[US] (UsOnly)
  • DUNTON, Vance [US]/[US] (UsOnly)
  • TANAKA, Yoichiro [JP]/[US] (UsOnly)
  • MAXWELL, Steven [US]/[US] (UsOnly)
  • ZHANG, Tong [US]/[US] (UsOnly)
  • RADIGAN, Steven, J. [US]/[US] (UsOnly)
Inventors
  • MAKALA, Raghuveer
  • DUNTON, Vance
  • TANAKA, Yoichiro
  • MAXWELL, Steven
  • ZHANG, Tong
  • RADIGAN, Steven, J.
Agents
  • THE MARBURY LAW GROUP PLLC
Priority Data
12/458,54315.07.2009US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF MAKING DAMASCENE DIODES USING SACRIFICIAL MATERIAL
(FR) PROCÉDÉ DE FABRICATION DE DIODES DAMASQUINÉES À L'AIDE D'UN MATÉRIAU SACRIFICIEL
Abstract
(EN)
A method of making a semiconductor device includes forming a first layer comprising a seed material over an underlying layer, forming a second layer comprising a sacrificial material over the first layer, the sacrificial material being different from the seed material, patterning the first layer and the second layer into a plurality of separate features, forming an insulating filling material between the plurality of the separate features, removing the sacrificial material from the separate features to form a plurality of openings in the insulating filling material such that the seed material is exposed in the plurality of openings, and growing a semiconductor material on the exposed seed material in the plurality of openings.
(FR)
L'invention porte sur un procédé de fabrication d'un dispositif à semi-conducteur qui consiste à former une première couche comprenant un matériau de germination au-dessus d'une couche sous-jacente, former une seconde couche comprenant un matériau sacrificiel au-dessus de la première couche, le matériau sacrificiel étant différent du matériau de germination, former les motifs de la première couche et de la seconde couche en une pluralité d'éléments séparés, former un matériau de remplissage isolant entre la pluralité d'éléments séparés, éliminer le matériau sacrificiel des éléments séparés afin de former une pluralité d'ouvertures dans le matériau de remplissage isolant de telle manière que le matériau de germination est exposé dans la pluralité d'ouvertures, et faire croître un matériau semi-conducteur sur le matériau de germination exposé dans la pluralité d'ouvertures.
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