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1. WO2011008703 - PLASMA PROCESSING CHAMBER WITH ENHANCED GAS DELIVERY

Publication Number WO/2011/008703
Publication Date 20.01.2011
International Application No. PCT/US2010/041729
International Filing Date 12.07.2010
IPC
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H05H 1/42 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
26Plasma torches
32using an arc
42with provisions for introducing materials into the plasma, e.g. powder, liquid
CPC
H01J 37/3244
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
3244Gas supply means
H01J 37/32449
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
3244Gas supply means
32449Gas control, e.g. control of the gas flow
H01J 37/32834
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
32816Pressure
32834Exhausting
Applicants
  • APPLIED MATERIALS, INC. [US]/[US] (AllExceptUS)
  • KUTNEY, Michael Charles [US]/[US] (UsOnly)
  • LINDLEY, Roger Alan [US]/[US] (UsOnly)
Inventors
  • KUTNEY, Michael Charles
  • LINDLEY, Roger Alan
Agents
  • PATTERSON, B. Todd
Priority Data
12/501,88513.07.2009US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PLASMA PROCESSING CHAMBER WITH ENHANCED GAS DELIVERY
(FR) CHAMBRE DE TRAITEMENT AU PLASMA AVEC DISTRIBUTION DE GAZ AMÉLIORÉE
Abstract
(EN)
A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a substrate support pedestal disposed in an interior volume of a chamber body, a lid enclosing the interior volume, a gas distribution plate positioned below the lid and above the substrate support pedestal, and a vortex inducing gas inlet oriented to induce a vortex of gas circulating in a plenum around a center line of the chamber body prior to the gas passing through the gas distribution plate.
(FR)
L'invention porte sur un procédé et sur un appareil pour assurer un écoulement dans une chambre de traitement. Dans un mode de réalisation, une chambre de traitement sous vide est disposée, laquelle comprend un socle de support de substrat disposé dans un volume intérieur d'un corps de chambre, un couvercle renfermant le volume intérieur et une plaque de distribution de gaz positionnée en dessous du couvercle et au-dessus du socle de support de substrat, et un vortex induisant une entrée de gaz orientée pour induire un vortex de gaz circulant dans un plenum autour d'une ligne centrale du corps de chambre avant que le gaz ne traverse la plaque de distribution de gaz.
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