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1. WO2011008688 - SCANNER PERFORMANCE COMPARISON AND MATCHING USING DESIGN AND DEFECT DATA

Publication Number WO/2011/008688
Publication Date 20.01.2011
International Application No. PCT/US2010/041697
International Filing Date 12.07.2010
IPC
H01L 21/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
CPC
G03F 7/70516
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70491Information management and control, including software
70516Calibration of components of the microlithographic apparatus, e.g. light sources, addressable mask, detectors
G03F 7/70625
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70625Pattern dimensions, e.g. line width, profile, sidewall angle, edge roughness
G03F 7/70641
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70641Focus
G03F 7/7065
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
7065Defect inspection
H01L 22/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
10Measuring as part of the manufacturing process
12for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Applicants
  • KLA-TENCOR CORPORATION [US]/[US] (AllExceptUS)
  • PARK, Allen [US]/[US] (UsOnly)
  • CHANG, Ellis [US]/[US] (UsOnly)
  • AOKI, Masami [JP]/[JP] (UsOnly)
  • YOUNG, Chris, Chih-Chien [US]/[US] (UsOnly)
  • PLIHAL, Martin [US]/[US] (UsOnly)
  • VAN RIET, Michael, John [US]/[US] (UsOnly)
Inventors
  • PARK, Allen
  • CHANG, Ellis
  • AOKI, Masami
  • YOUNG, Chris, Chih-Chien
  • PLIHAL, Martin
  • VAN RIET, Michael, John
Agents
  • BEVER, HOFFMAN & HARMS, LLP
Priority Data
61/226,65417.07.2009US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SCANNER PERFORMANCE COMPARISON AND MATCHING USING DESIGN AND DEFECT DATA
(FR) COMPARAISON ET MISE EN CORRESPONDANCE DE PERFORMANCES DE BALAYAGE AU MOYEN DE DONNÉES DE CONSIGNE ET DE DONNÉES DÉFECTUEUSES
Abstract
(EN)
A system and method of matching multiple scanners using design and defect data are described. A golden wafer is processed using a golden tool. A second wafer is processed using a second tool. Both tools provide focus/exposure modulation. Wafer-level spatial signatures of critical structures for both wafers can be compared to evaluate the behavior of the scanners. Critical structures can be identified by binning defects on the golden wafer having similar patterns. In one embodiment, the signatures must match within a certain percentage or the second tool is characterized as a "no match". Reticles can be compared in a similar manner, wherein the golden and second wafers are processed using a golden reticle and a second reticle, respectively.
(FR)
L'invention concerne un système et un procédé de mise en correspondance de scanners multiples utilisant des données de consigne et des données défectueuses. On traite une tranche de référence à l'aide d'un outil de référence. On traite une seconde tranche à l'aide d'un second outil. Les deux outils fournissent une modulation de la focalisation/de l'exposition. On peut comparer des signatures spatiales au niveau de la tranche pour des structures critiques des deux tranches afin d'évaluer le comportement des scanners. On peut identifier des structures critiques en repérant sur la tranche de référence des défauts comportant des motifs similaires. Dans une forme de réalisation, les signatures doivent correspondre dans la limite d'un certain pourcentage, faute de quoi le second outil est étiqueté comme "ne correspondant pas". On peut comparer des réticules d'une manière similaire, la tranche de référence et la seconde tranche étant respectivement traitées à l'aide d'un réticule de référence et d'un second réticule.
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