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1. WO2011008615 - MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS

Publication Number WO/2011/008615
Publication Date 20.01.2011
International Application No. PCT/US2010/041300
International Filing Date 08.07.2010
IPC
G11C 11/16 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
H01L 43/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
CPC
B82Y 25/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
25Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
G11C 11/161
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
161details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
H01F 10/3254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
3254the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
H01F 10/3268
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
3268the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
H01F 10/3272
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
3268the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
3272by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
H01F 10/329
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
329Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
Applicants
  • SEAGATE TECHNOLOGY LLC [US]/[US] (AllExceptUS)
  • YUANKAI, Zheng [SG]/[US] (UsOnly)
  • ZHENG, Gao [CN]/[US] (UsOnly)
  • WENZHONG, Zhu [CN]/[US] (UsOnly)
  • WONJOON, Jung [KR]/[US] (UsOnly)
  • HAIWEN, Xi [CN]/[US] (UsOnly)
Inventors
  • YUANKAI, Zheng
  • ZHENG, Gao
  • WENZHONG, Zhu
  • WONJOON, Jung
  • HAIWEN, Xi
Agents
  • JENNIFER, Buenzow
Priority Data
12/502,20913.07.2009US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS
(FR) EMPILEMENT MAGNETIQUE COMPRENANT DES COUCHES DE REFERENCE A SENS DE MAGNETISATION PERPENDICULAIRES
Abstract
(EN)
A magnetic cell (10) includes a ferromagnetic free layer (18) having a free magnetization orientation direction (MF) and a first ferromagnetic pinned reference layer (14) having a first reference magnetization orientation direction (MR1)that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer (16) is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer (13) having a second reference magnetization orientation direction (MR2) that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.
(FR)
L'invention concerne une cellule magnétique (10) comprenant une couche libre ferromagnétique (18) à sens de magnétisation libre (MF) et une première couche de référence fixe ferromagnétique (14) présentant un premier sens de magnétisation de référence (MR1) parallèle ou antiparallèle au sens de magnétisation libre. Une première couche barrière d'oxyde (16) est disposée entre la couche libre ferromagnétique et la première couche de référence fixe ferromagnétique. La cellule magnétique selon l'invention comprend également une deuxième couche de référence fixe ferromagnétique (13) présentant un deuxième sens de magnétisation de référence (MR2) perpendiculaire au premier sens de magnétisation de référence. La couche libre ferromagnétique est disposée entre la première couche de référence fixe ferromagnétique et la deuxième couche de référence fixe ferromagnétique.
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