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1. WO2011007878 - DIFFRACTION GRATING, ORGANIC EL ELEMENT USING SAME, AND METHOD FOR MANUFACTURING SAID DIFFRACTION GRATING AND ORGANIC EL ELEMENT

Publication Number WO/2011/007878
Publication Date 20.01.2011
International Application No. PCT/JP2010/062110
International Filing Date 16.07.2010
IPC
G02B 5/18 2006.01
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
18Diffracting gratings
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H05B 33/02 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
02Details
CPC
G02B 5/1809
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
18Diffraction gratings
1809with pitch less than or comparable to the wavelength
H01L 2251/105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2251Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
10Processes specially adapted for the manufacture or treatment of organic semiconductor devices
105Patterning of a layer by embossing, e.g. to form trenches in an insulating layer
H01L 51/5275
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5262Arrangements for extracting light from the device
5275Refractive means, e.g. lens
H05B 33/10
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Applicants
  • JX日鉱日石エネルギー株式会社 JX Nippon Oil & Energy Corporation [JP]/[JP] (AllExceptUS)
  • 国立大学法人東京工業大学 TOKYO INSTITUTE OF TECHNOLOGY [JP]/[JP] (AllExceptUS)
  • 關 隆史 SEKI Takashi [JP]/[JP] (UsOnly)
  • 西村 涼 NISHIMURA Suzushi [JP]/[JP] (UsOnly)
  • 福田 真林 FUKUDA Maki [JP]/[JP] (UsOnly)
  • 福島 麻登香 FUKUSHIMA Madoka [JP]/[JP] (UsOnly)
  • 増山 聡 MASUYAMA Satoshi [JP]/[JP] (UsOnly)
  • 鄭 旬紋 JEONG, Soon Moon [KR]/[JP] (UsOnly)
  • 竹添 秀男 TAKEZOE Hideo [JP]/[JP] (UsOnly)
  • ク ウオンヘ KOO, Won Hoe [KR]/[JP] (UsOnly)
Inventors
  • 關 隆史 SEKI Takashi
  • 西村 涼 NISHIMURA Suzushi
  • 福田 真林 FUKUDA Maki
  • 福島 麻登香 FUKUSHIMA Madoka
  • 増山 聡 MASUYAMA Satoshi
  • 鄭 旬紋 JEONG, Soon Moon
  • 竹添 秀男 TAKEZOE Hideo
  • ク ウオンヘ KOO, Won Hoe
Agents
  • 特許業務法人セントクレスト国際特許事務所 CENTCREST IP ATTORNEYS
Priority Data
2009-16805616.07.2009JP
2009-20043631.08.2009JP
2009-29786828.12.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) DIFFRACTION GRATING, ORGANIC EL ELEMENT USING SAME, AND METHOD FOR MANUFACTURING SAID DIFFRACTION GRATING AND ORGANIC EL ELEMENT
(FR) GRILLE DE DIFFRACTION, ÉLÉMENT EL ORGANIQUE UTILISANT CETTE GRILLE DE DIFFRACTION, ET PROCÉDÉ DE FABRICATION DE CETTE GRILLE DE DIFFRACTION ET DE CET ÉLÉMENT EL ORGANIQUE
(JA) 回折格子及びそれを用いた有機EL素子、並びにそれらの製造方法
Abstract
(EN)
Disclosed is a diffraction grating provided with a transparent support substrate and a cured resin layer that has a texture formed on the surface thereof and is laminated on top of the transparent support substrate. If the texture formed on the surface of the cured resin layer is analyzed using an atomic force microscope and the obtained texture analysis image is run through a two-dimensional fast Fourier transform, yielding a Fourier transform image, said Fourier transform image exhibits a circular or annular pattern, roughly centered on the origin, the absolute value of the wavenumber thereof being 0 μm1. Also, said circular or annular pattern is in a region where the absolute value of the wavenumber is less than or equal to 10 μm1.
(FR)
La présente invention concerne une grille de diffraction dotée d'un substrat de support transparent et d'une couche de résine durcie qui possède une texture formée sur sa surface et qui est stratifiée sur ledit substrat de support transparent. Si la texture formée sur la surface de la couche de résine durcie est analysée à l'aide d'un microscope à force atomique et que l'image d'analyse de texture obtenue subit une transformation de Fourier rapide à deux dimensions, ce qui permet d'obtenir une image à transformation de Fourier, ladite image à transformation de Fourier présente une configuration circulaire ou annulaire, à peu près centrée sur l'origine, dont la valeur absolue du nombre d'ondes est de 0 μm−1. De plus, ladite configuration circulaire ou annulaire se situe dans une zone où la valeur absolue du nombre d'ondes est inférieure ou égale à 10 μm−1.
(JA)
 透明支持基板、及び、前記透明支持基板上に積層され、表面に凹凸が形成された硬化樹脂層を備える回折格子であって、 前記硬化樹脂層の表面に形成されている凹凸の形状を原子間力顕微鏡を用いて解析して得られる凹凸解析画像に2次元高速フーリエ変換処理を施してフーリエ変換像を得た場合において、前記フーリエ変換像が、波数の絶対値が0μm-1である原点を略中心とする円状又は円環状の模様を示しており、且つ、前記円状又は円環状の模様が、波数の絶対値が10μm-1以下の範囲内となる領域内に存在する、回折格子。
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