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1. WO2011007776 - GROUP-III NITRIDE SEMICONDUCTOR ELEMENT, EPITAXIAL SUBSTRATE, AND METHOD FOR FABRICATING A GROUP-III NITRIDE SEMICONDUCTOR ELEMENT

Publication Number WO/2011/007776
Publication Date 20.01.2011
International Application No. PCT/JP2010/061837
International Filing Date 13.07.2010
IPC
H01S 5/343 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers , multiple quantum well lasers or graded index separate confinement heterostructure lasers
343in AIIIBV compounds, e.g. AlGaAs-laser
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
CPC
B82Y 20/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
20Nanooptics, e.g. quantum optics or photonic crystals
H01L 21/02389
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02387Group 13/15 materials
02389Nitrides
H01L 21/02433
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
02433Crystal orientation
H01L 21/02458
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02455Group 13/15 materials
02458Nitrides
H01L 21/0254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02538Group 13/15 materials
0254Nitrides
H01S 2302/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2302Amplification / lasing wavelength
Applicants
  • 住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP]/[JP] (AllExceptUS)
  • 塩谷 陽平 ENYA Yohei [JP]/[JP] (UsOnly)
  • 善積 祐介 YOSHIZUMI Yusuke [JP]/[JP] (UsOnly)
  • 京野 孝史 KYONO Takashi [JP]/[JP] (UsOnly)
  • 住友 隆道 SUMITOMO Takamichi [JP]/[JP] (UsOnly)
  • 秋田 勝史 AKITA Katsushi [JP]/[JP] (UsOnly)
  • 上野 昌紀 UENO Masaki [JP]/[JP] (UsOnly)
  • 中村 孝夫 NAKAMURA Takao [JP]/[JP] (UsOnly)
Inventors
  • 塩谷 陽平 ENYA Yohei
  • 善積 祐介 YOSHIZUMI Yusuke
  • 京野 孝史 KYONO Takashi
  • 住友 隆道 SUMITOMO Takamichi
  • 秋田 勝史 AKITA Katsushi
  • 上野 昌紀 UENO Masaki
  • 中村 孝夫 NAKAMURA Takao
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
Priority Data
2009-16714015.07.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) GROUP-III NITRIDE SEMICONDUCTOR ELEMENT, EPITAXIAL SUBSTRATE, AND METHOD FOR FABRICATING A GROUP-III NITRIDE SEMICONDUCTOR ELEMENT
(FR) ELÉMENT SEMI-CONDUCTEUR AU NITRURE DU GROUPE III, SUBSTRAT ÉPITAXIQUE ET PROCÉDÉ DE FABRICATION D'UN ÉLÉMENT SEMI-CONDUCTEUR AU NITRURE DU GROUPE III
(JA) III族窒化物半導体素子、エピタキシャル基板、及びIII族窒化物半導体素子を作製する方法
Abstract
(EN)
Provided is a group-III nitride semiconductor element that includes a semipolar epitaxial film having good surface morphology. A principal surface (13a) of a support substrate (13) comprising a group-III nitride semiconductor extends along a reference plane (RSUB) orthogonal to a reference axis (Ax) that is inclined at a prescribed angle (ALPHA) to a c axis of said group-III nitride semiconductor. The reference axis (Ax) is inclined at a first angle (ALPHA1) from the c axis of the group-III nitride semiconductor towards an m axis thereof, said first angle being greater than or equal to 10° and less than 80°. The principal surface (13a) is semipolar. The reference axis (Ax) is inclined at a second angle (ALPHA2) from the c axis of the group-III nitride semiconductor towards an a axis thereof, said second angle being between −0.30° and +0.30°, inclusive. The reference axis (Ax) extends in the normal direction of the principal surface (13a). The morphology of the outermost surface (15a) of an epitaxial semiconductor region (15) includes a plurality of pits, the density thereof being no greater than 5 × 104 pits/cm2.
(FR)
Cette invention concerne un élément semi-conducteur au nitrure du groupe III, comprenant une couche épitaxique semi-polaire film présentant une bonne morphologie de surface. Une surface principale (13a) d'un substrat de support (13) comprenant un semi-conducteur au nitrure du groupe III, s'étend le long d'un plan de référence (RSUB) perpendiculaire à un axe de référence (Ax) incliné d'un angle prédéterminé (ALPHA) par rapport à un axe c dudit semi-conducteur au nitrure du groupe III. L'axe de référence (Ax) est incliné d'un premier angle (ALPHA1) par rapport à l'axe c du semi-conducteur au nitrure du groupe III dans le sens d'un axe m de ce dernier, ledit premier angle étant supérieur ou égal à 10° et inférieur ou égal à 80°. La surface principale (13a) est semi-polaire. L'axe de référence (Ax) est incliné d'un second angle (ALPHA2) par rapport à l'axe c du semi-conducteur au nitrure du groupe III dans le sens d'un axe a de ce dernier, ledit second angle allant de −0.30° à +0.30°, inclus. L'axe de référence (Ax) s'étend dans un sens perpendiculaire à la surface principale (13a). La morphologie de la surface la plus extérieure (15a) d'une zone semi-conductrice épitaxique (15) comprend une pluralité de micro-cuvettes dont la densité est inférieure ou égale à 5 × 104 micro-cuvettes/cm2.
(JA)
良好な表面モフォロジを有する半極性のエピタキシャル膜を含むIII族窒化物半導体素子を提供する。III族窒化物半導体からなる支持基体13の主面13aは、該III族窒化物半導体のc軸に対して所定の角度ALPHAで傾斜した基準軸Axに直交する基準平面RSUBに沿って延在する。基準軸Axは、該III族窒化物半導体のc軸からm軸への方向に10度以上80度未満の範囲内の第1の角度ALPHA1で傾斜する。主面13aは半極性を示す。基準軸Axは、該III族窒化物半導体のc軸からa軸への方向に-0.30度以上+0.30度以下の範囲内の第2の角度ALPHA2にある。基準軸Axは主面13aの法線方向に延在する。エピタキシャル半導体領域15の最表面15aのモフォロジは複数のピットを含み、該ピットのピット密度は5×10cm-2以下である。
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