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1. WO2011007588 - CMP FLUID AND METHOD FOR POLISHING PALLADIUM

Publication Number WO/2011/007588
Publication Date 20.01.2011
International Application No. PCT/JP2010/051671
International Filing Date 05.02.2010
IPC
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
B24B 37/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
CPC
C09G 1/02
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
02containing abrasives or grinding agents
H01L 21/3212
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
32115Planarisation
3212by chemical mechanical polishing [CMP]
Applicants
  • 日立化成工業株式会社 HITACHI CHEMICAL COMPANY, LTD. [JP]/[JP] (AllExceptUS)
  • 南 久貴 MINAMI Hisataka [JP]/[JP] (UsOnly)
  • 税所 亮太 SAISYO Ryouta [JP]/[JP] (UsOnly)
  • 天野倉 仁 AMANOKURA Jin [JP]/[JP] (UsOnly)
  • 岡田 悠平 OKADA Yuuhei [JP]/[JP] (UsOnly)
  • 小野 裕 ONO Hiroshi [JP]/[JP] (UsOnly)
Inventors
  • 南 久貴 MINAMI Hisataka
  • 税所 亮太 SAISYO Ryouta
  • 天野倉 仁 AMANOKURA Jin
  • 岡田 悠平 OKADA Yuuhei
  • 小野 裕 ONO Hiroshi
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
Priority Data
2009-16799116.07.2009JP
2009-23456108.10.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) CMP FLUID AND METHOD FOR POLISHING PALLADIUM
(FR) FLUIDE DE POLISSAGE CHIMICO-MÉCANIQUE ET PROCÉDÉ DE POLISSAGE DU PALLADIUM
(JA) パラジウム研磨用CMP研磨液及び研磨方法
Abstract
(EN)
A chemical mechanical polishing (CMP) fluid for polishing palladium, which comprises an organic solvent, 1,2,4-triazole, a phosphoric acid, an oxidizing agent, and abrasive grains; and a method of polishing a substrate by means of a polishing pad while feeding a CMP fluid between the substrate and the polishing pad, wherein the substrate has a palladium layer on the surface facing the polishing pad and the CMP fluid comprises an organic solvent, 1,2,4-triazole, a phosphoric acid, an oxidizing agent, and abrasive grains.
(FR)
L'invention concerne un fluide de polissage chimico-mécanique (CMP) pour le polissage du palladium, comprenant un solvant organique, un 1,2,4-triazole, un acide phosphorique, un agent d'oxydation et des grains abrasifs ; ainsi qu'un procédé de polissage d'un substrat au moyen d'un tampon de polissage tout en envoyant un fluide CMP entre le substrat et le tampon de polissage, le substrat portant une couche de palladium sur la surface faisant face au tampon de polissage et le fluide CMP comprenant un solvant organique, un 1,2,4-triazole, un acide phosphorique, un agent d'oxydation et des grains abrasifs.
(JA)
 本発明のパラジウム研磨用CMP研磨液は、有機溶媒、1,2,4-トリアゾール、リン酸類、酸化剤及び砥粒を含有する。本発明の基板の研磨方法は、基板と研磨布との間にCMP研磨液を供給しながら基板を研磨布で研磨する、基板の研磨方法であって、基板が、研磨布に対向する面にパラジウム層を有する基板であり、CMP研磨液が、有機溶媒、1,2,4-トリアゾール、リン酸類、酸化剤及び砥粒を含有するCMP研磨液である。
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