Processing

Please wait...

Settings

Settings

Goto Application

1. WO2011007412 - METHOD FOR PRODUCING POSITIVE ELECTRODE ACTIVE MATERIAL LAYER

Publication Number WO/2011/007412
Publication Date 20.01.2011
International Application No. PCT/JP2009/062693
International Filing Date 13.07.2009
IPC
H01M 4/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
4Electrodes
02Electrodes composed of, or comprising, active material
04Processes of manufacture in general
C23C 14/08 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
08Oxides
C23C 14/58 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
58After-treatment
H01M 4/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
4Electrodes
02Electrodes composed of, or comprising, active material
H01M 4/50 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
4Electrodes
02Electrodes composed of, or comprising, active material
36Selection of substances as active materials, active masses, active liquids
48of inorganic oxides or hydroxides
50of manganese
H01M 4/52 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
4Electrodes
02Electrodes composed of, or comprising, active material
36Selection of substances as active materials, active masses, active liquids
48of inorganic oxides or hydroxides
52of nickel, cobalt or iron
CPC
C23C 14/08
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
08Oxides
C23C 14/5806
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
58After-treatment
5806Thermal treatment
H01M 10/0562
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
10Secondary cells; Manufacture thereof
05Accumulators with non-aqueous electrolyte
056characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
0561the electrolyte being constituted of inorganic materials only
0562Solid materials
H01M 2004/021
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
4Electrodes
02Electrodes composed of or comprising active material
021Physical characteristics, e.g. porosity, surface area
H01M 2004/028
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
4Electrodes
02Electrodes composed of or comprising active material
026characterised by the polarity
028Positive electrodes
H01M 4/0423
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
4Electrodes
02Electrodes composed of or comprising active material
04Processes of manufacture in general
0402Methods of deposition of the material
0421involving vapour deposition
0423Physical vapour deposition
Applicants
  • トヨタ自動車株式会社 TOYOTA JIDOSHA KABUSHIKI KAISHA [JP]/[JP] (AllExceptUS)
  • 大木 栄幹 OKI, Hideki [JP]/[JP] (UsOnly)
Inventors
  • 大木 栄幹 OKI, Hideki
Agents
  • 山下 昭彦 YAMASHITA, Akihiko
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING POSITIVE ELECTRODE ACTIVE MATERIAL LAYER
(FR) PROCÉDÉ DE FABRICATION D'UNE COUCHE DE SUBSTANCE ACTIVE D'ÉLECTRODE POSITIVE
(JA) 正極活物質層の製造方法
Abstract
(EN)
Disclosed is a method for producing a positive electrode active material layer, wherein a high-purity lithium complex oxide can be obtained by suppressing generation of impurities, a flat film can be obtained, and orientation control is possible. Specifically disclosed is a method for producing a positive electrode active material layer, wherein a positive electrode active material layer containing LiXaOb (wherein X represents at least one transition metal element selected from the group consisting of Co, Ni and Mn, a = 0.7-1.3 and b = 1.5-2.5) is formed on a substrate.  The method is characterized by comprising a positive electrode active material precursor film forming step wherein a positive electrode active material precursor film is formed on the substrate by physical vapor deposition while setting the temperature of the substrate to 300˚C or less, and an annealing step wherein the positive electrode active material precursor film is subjected to annealing at a temperature not less than the temperature at which the LiXaOb can be crystallized.  The method is also characterized in that the substrate has an orientation in the surface.
(FR)
La présente invention concerne un procédé pour la fabrication d'une couche de substance active d'électrode positive, un oxyde de complexe de lithium haute pureté pouvant être obtenu par la suppression de la génération d'impuretés, un film plat pouvant être obtenu et une régulation de l'orientation étant possible. L'invention concerne en particulier un procédé de fabrication d'une couche de substance active d'électrode positive, une telle couche contenant LiXaOb (dans laquelle X représente au moins un élément d'un métal de transition choisit dans le groupe consistant en Co, Ni et Mn, a = 0,7 à 1,3 et b = 1,5 à 2,5) étant formée sur un substrat. Le procédé est caractérisé en ce qu'il comprend une étape de formation d'un film de précurseur de substance active d'électrode positive dans laquelle un tel film est formé sur le substrat par un dépôt physique en phase vapeur tout en réglant la température du substrat pour qu'elle soit inférieure ou égale à 300 °C, et une étape de recuit dans laquelle ledit film est soumis à un recuit à une température supérieure ou égale à la température à laquelle le peut LiXaOb être cristallisé. Le procédé est également caractérisé en ce que le substrat présente une certaine orientation dans la surface.
(JA)
 本発明は、不純物の生成を抑制して高純度のリチウム複合酸化物を得ることが可能であり、また平坦な膜を得ることが可能であり、さらには配向制御が可能な正極活物質層の製造方法を提供することを主目的とする。 本発明は、基板上に、LiX(XはCo、NiおよびMnからなる群から選択される少なくとも1種の遷移金属元素であり、a=0.7~1.3、b=1.5~2.5である。)を含有する正極活物質層を形成する正極活物質層の製造方法であって、上記基板の温度を300℃以下に設定し、物理気相成長法により上記基板上に正極活物質前駆体膜を形成する正極活物質前駆体膜形成工程と、上記LiXの結晶化可能温度以上の温度で上記正極活物質前駆体膜にアニール処理を施すアニール処理工程とを有し、上記基板が表面に配向性を有することを特徴とする正極活物質層の製造方法を提供することにより、上記課題を解決する。
Latest bibliographic data on file with the International Bureau