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1. WO2011005447 - SEMICONDUCTOR OPTICAL DETECTOR STRUCTURE

Publication Number WO/2011/005447
Publication Date 13.01.2011
International Application No. PCT/US2010/039007
International Filing Date 17.06.2010
IPC
H01L 31/0368 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0368including polycrystalline semiconductors
H01L 31/0392 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0392including thin films deposited on metallic or insulating substrates
H01L 31/072 2012.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
H01L 31/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 31/03921
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0392including thin films deposited on metallic or insulating substrates ; ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
03921including only elements of Group IV of the Periodic System
H01L 31/068
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/078
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
078including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
H01L 31/1804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
1804comprising only elements of Group IV of the Periodic System
H01L 31/1872
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
1872Recrystallisation
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
54Material technologies
547Monocrystalline silicon PV cells
Applicants
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US] (AllExceptUS)
  • DE SOUZA, Joel [BR]/[US] (UsOnly)
  • HOVEL, Harold [US]/[US] (UsOnly)
  • INNS, Daniel [AU]/[US] (UsOnly)
  • KIM, Jeehwan [KR]/[US] (UsOnly)
  • SADANA, Devendra [US]/[US] (UsOnly)
Inventors
  • DE SOUZA, Joel
  • HOVEL, Harold
  • INNS, Daniel
  • KIM, Jeehwan
  • SADANA, Devendra
Agents
  • PERCELLO, Louis
Priority Data
61/219,13122.06.2009US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR OPTICAL DETECTOR STRUCTURE
(FR) STRUCTURE DE DÉTECTEUR OPTIQUE À SEMI-CONDUCTEUR
Abstract
(EN)
A semiconductor is disclosed with a substrate doped with a substrate doping. There is a crystalline semiconductor layer disposed on a front side of the substrate. The crystalline semiconductor layer has a layer doping. The substrate doping changes to the layer doping within a 100 angstrom transition region. In alternative embodiments, the layer doping has novel profiles. In other alternative embodiments, the substrate has a crystalline semiconductor layers disposed on each of a front and a back side of the substrate. Each of the crystalline semiconductor layers has a respective layer doping and each of these layer dopings changes to the substrate doping within a respective transition region less than 100 angstroms thick. In still other embodiments of this invention, an amorphous silicon layer is disposed on a side of the crystalline semiconductor layer opposite the substrate. The amorphous silicon layer has an amorphous doping so that a tunnel junction is formed between the doped crystalline semiconductor layer and the amorphous layer. Manufacturing these structures at below 700 degrees Centigrade enables the narrow transition regions of the structures.
(FR)
L'invention porte sur une structure à semi-conducteur comprenant un substrat dopé par un dopage de substrat. Il existe une couche semi-conductrice cristalline agencée sur un côté avant du substrat. La couche semi-conductrice cristalline a un dopage de couche. Le dopage du substrat varie jusqu'au dopage de la couche à l'intérieur d'une région de transition de 100 angströms. Dans des variantes de réalisation, le dopage de couche présente de nouveaux profils. Dans d'autres variantes de réalisation, le substrat porte une couche semi-conductrice cristalline agencée sur chacun d'un côté avant et d'un côté arrière du substrat. Chacune des couches semi-conductrices cristallines a un dopage de couche respectif et chacun de ces dopages de couche varie jusqu'au dopage de substrat à l'intérieur d'une région de transition respective d'épaisseur inférieure à 100 angströms. Dans encore d'autres variantes de réalisation de cette invention, une couche de silicium amorphe est agencée sur un côté de la couche semi-conductrice cristalline opposé au substrat. La couche de silicium amorphe a un dopage amorphe de telle manière qu'une jonction tunnel est formée entre la couche semi-conductrice cristalline dopée et la couche amorphe. Une fabrication de ces structures à une température inférieure à 700 degrés centigrades permet d'obtenir les régions de transition étroites des structures.
Also published as
Latest bibliographic data on file with the International Bureau