Processing

Please wait...

PATENTSCOPE will be unavailable a few hours for maintenance reason on Saturday 31.10.2020 at 7:00 AM CET
Settings

Settings

Goto Application

1. WO2011005444 - GALLIUM NITRIDE FOR LIQUID CRYSTAL ELECTRODES

Publication Number WO/2011/005444
Publication Date 13.01.2011
International Application No. PCT/US2010/038992
International Filing Date 17.06.2010
IPC
G02F 1/1343 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333Constructional arrangements
1343Electrodes
H01L 29/778 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 21/335 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
CPC
G02F 1/13439
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333Constructional arrangements; ; Manufacturing methods
1343Electrodes
13439characterised by their electrical, optical, physical properties; materials therefor; method of making
H01L 29/2003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
2003Nitride compounds
H01L 29/7787
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT ; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
7786with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
7787with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
Applicants
  • RAYTHEON COMPANY [US]/[US] (AllExceptUS)
  • RESLER, Daniel, P. [US]/[US] (UsOnly)
  • HOKE, William, E. [US]/[US] (UsOnly)
Inventors
  • RESLER, Daniel, P.
  • HOKE, William, E.
Agents
  • DALY, Christopher, S.
Priority Data
61/219,14622.06.2009US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) GALLIUM NITRIDE FOR LIQUID CRYSTAL ELECTRODES
(FR) NITRURE DE GALLIUM POUR DES ÉLECTRODES À CRISTAUX LIQUIDES
Abstract
(EN)
Described herein is a liquid crystal (LC) device having Gallium Nitride HEMT electrodes. The Gallium Nitride HEMT electrodes can be grown on a variety of substrates, including but not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium flouride buffer layer),and spinel. Also described is a structure provided from GaN HEMT grown on large area silicon substrates and transferred to another substrate with appropriate properties for OPA devices. Such substrates include, but are not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer),and spinel. The GaN HEMT structure includes an AlN interlayer for improving the mobility of the structure.
(FR)
La présente invention concerne un dispositif à cristaux liquides (LC) comportant des électrodes de HEMT (transistor à haute mobilité électronique) en nitrure de gallium. Les électrodes de HEMT en nitrure de gallium peuvent croître sur une diversité de substrats comprenant, mais sans s'y limiter, le saphir, le carbure de silicium, le silicium, le verre de silice (à l'aide d'une couche tampon de fluorure de calcium) et le spinelle. L'invention concerne également une structure fournie à partir d'un HEMT en GaN sur des substrats de silicium à grande surface et transférée vers un autre substrat doté de propriétés appropriées pour des dispositifs OPA. De tels substrats comprennent, sans s'y limiter, le saphir, le carbure de silicium, le silicium, le verre de silice (à l'aide d'une couche tampon de fluorure de calcium) et le spinelle. La structure de HEMT en GaN comprend une couche intermédiaire en AlN permettant d'améliorer la mobilité de la structure.
Latest bibliographic data on file with the International Bureau