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1. WO2011004717 - CONTACT-HOLE FORMING METHOD

Publication Number WO/2011/004717
Publication Date 13.01.2011
International Application No. PCT/JP2010/060740
International Filing Date 24.06.2010
IPC
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
C23C 16/42 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
42Silicides
G02F 1/1368 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
1368in which the switching element is a three-electrode device
G09F 9/30 2006.01
GPHYSICS
09EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30in which the desired character or characters are formed by combining individual elements
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/318 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
318composed of nitrides
CPC
G02F 1/136227
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
136227Through-hole connection of the pixel electrode to the active element through an insulation layer
H01L 21/76801
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
H01L 21/76804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76802by forming openings in dielectrics
76804by forming tapered via holes
H01L 27/124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
124with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
H01L 27/1248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1248with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
Applicants
  • シャープ株式会社 SHARP KABUSHIKI KAISHA [JP]/[JP] (AllExceptUS)
  • 満留 和也 MITSUDOME, Kazuya (UsOnly)
Inventors
  • 満留 和也 MITSUDOME, Kazuya
Agents
  • 手島 勝 TESHIMA Masaru
Priority Data
2009-16009606.07.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) CONTACT-HOLE FORMING METHOD
(FR) PROCÉDÉ DE FORMATION D'OUVERTURE DE CONTACT
(JA) コンタクトホール形成方法
Abstract
(EN)
A contact-hole forming method is provided with a process (a) for forming an insulation film on a substrate, and a process (b) for forming contact holes by etching the insulation film. Process (a) comprises a process (a1) that places the substrate in between a pair of electrodes; a process (a2) that supplies a first reactant gas in between the pair of electrodes into which the substrate was placed in process (a1); a process (a3) that raises, after process (a2), the RF output to be supplied in between the pair of electrodes, to a predetermined prescribed value, and generates plasma; and a process (a4) that supplies, after process (a3), a second reactant gas that forms the insulation film.
(FR)
La présente invention a trait à un procédé de formation d'ouverture de contact comportant un processus (a) permettant de former une pellicule isolante sur un substrat et un processus (b) permettant de former des ouvertures de contact en attaquant chimiquement la pellicule isolante. Le processus (a) comprend un processus (a1) consistant à placer le substrat entre une paire d'électrodes ; un processus (a2) consistant à fournir un premier gaz réactif entre les deux électrodes entre lesquelles le substrat a été placé au cours du processus (a1) ; un processus (a3) consistant à augmenter, après le processus (a2), la sortie radiofréquence devant être fournie entre la paire d'électrodes, jusqu'à une valeur prescrite prédéterminée et à générer du plasma ; et un processus (a4) consistant à fournir, après le processus (a3), un second gaz réactif qui forme la pellicule isolante.
(JA)
 本発明に係るコンタクトホール形成方法は、基板上に絶縁膜を形成する工程(a)と、当該絶縁膜にエッチングによってコンタクトホールを形成する工程(b)とを備えている。ここで、工程(a)では、一対の電極間に基板を配置する工程(a1)と、工程(a1)において基板が配置される一対の電極間に第1反応ガスを供給する工程(a2)と、工程(a2)の後で、一対の電極間に供給するRF出力を予め定められた所定値まで上げてプラズマを生じさせる工程(a3)と、工程(a3)の後で、絶縁膜を形成する第2反応ガスを供給する工程(a4)とを含んでいる。
Also published as
Latest bibliographic data on file with the International Bureau