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1. WO2011004036 - INTERMEDIATE-BAND SILICON MATERIALS

Publication Number WO/2011/004036
Publication Date 13.01.2011
International Application No. PCT/ES2010/000282
International Filing Date 30.06.2010
IPC
C01B 33/00 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33Silicon; Compounds thereof
H01L 31/0256 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
CPC
C01B 33/00
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
33Silicon; Compounds thereof
H01L 31/0256
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
H01L 31/028
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
028including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 31/036
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
547Monocrystalline silicon PV cells
Y02P 20/133
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
20Technologies relating to chemical industry
10Process efficiency
133Renewable energy sources, e.g. sunlight
Applicants
  • UNIVERSIDAD POLITÉCNICA DE MADRID [ES]/[ES] (AllExceptUS)
  • CONSEJO SUPERIOR DE INVESTIGACIONES CIENTÍFICAS [ES]/[ES] (AllExceptUS)
  • WAHNON BENARROCH, Perla [ES]/[ES] (UsOnly)
  • PALACIOS CLEMENTE, Pablo [ES]/[ES] (UsOnly)
  • CONESA CEGARRA, José Carlos [ES]/[ES] (UsOnly)
Inventors
  • WAHNON BENARROCH, Perla
  • PALACIOS CLEMENTE, Pablo
  • CONESA CEGARRA, José Carlos
Common Representative
  • UNIVERSIDAD POLITÉCNICA DE MADRID [ES]/[ES]
Priority Data
P20093043309.07.2009ES
Publication Language Spanish (ES)
Filing Language Spanish (ES)
Designated States
Title
(EN) INTERMEDIATE-BAND SILICON MATERIALS
(ES) MATERIALES DE SILICIO DE BANDA INTERMEDIA
(FR) MATÉRIAUX DE SILICIUM À BANDE INTERMÉDIAIRE
Abstract
(EN)
Intermediate-band silicon material that comprises a variety of silicon, such as a clathrate, whether amorphous or nanostructured type, the bandgap of which is increased to a value in the range between 1.7 and 2.5 eV, and wherein the intermediate band is formed by means of the interstitial or substitutional inclusion, in said variety of silicon, of light transition elements selected from Groups 4-11 of the Periodic Table, which provide partially occupied electronic bands within the bandgap such that an intermediate band is formed in said variety of silicon, thereby constituting a material for use as a light absorbent in photovoltaic conversion devices, as a light absorbent in photocatalytic or photoelectrochemical systems, for photon up-conversion or down-conversion applications or for applications in spintronics or in radiation-detection devices.
(ES)
Material de silicio de banda intermedia que comprende una variedad de silicio, tal como las de tipo clatrato, amorfo o nanoestructurado, cuyo ancho de banda prohibida, también llamado bandgap, está aumentado hasta alcanzar un valor en el rango entre 1.7 y 2.5 eV, y en el que la banda intermedia se forma mediante la inclusión intersticial o sustitucional, en dicha variedad de silicio, de elementos de transición ligeros, seleccionados de los grupos 4-11 de la tabla periódica, que aportan bandas electrónicas parcialmente ocupadas situadas dentro del bandgap de manera que se forma en dicha variedad de silicio una banda intermedia, constituyendo así un material para ser utilizado como absorbente de luz en dispositivos de conversión fotovoltaica, como absorbente de luz en sistemas fotocatalíticos o fotoelectroquímicos, para aplicaciones de conversión fotónica "hacia arriba" o "hacia abajo" (up-conversion o down-conversion) o para aplicaciones en espintrónica o en dispositivos de detección de radiación.
(FR)
L'invention concerne un matériau de silicium à bande intermédiaire comprenant une variété de silicium, telle que celles du type clathrate, amorphe ou nanostructuré, dont la largeur de bande interdite, aussi appelée bandgap, augmente jusqu'à une valeur comprise entre 1,7 et 2,5 eV, et dans lequel la bande intermédiaire se forme par inclusion interstitielle ou substitutionnelle, dans ladite variété de silicium, d'éléments de transition légers, choisis dans les groupes 4 à 11 du tableau périodique, qui apportent des bandes électroniques partiellement occupées à l'intérieur de la bande interdite, de sorte qu'une bande intermédiaire se forme dans ladite variété de silicium, d'où l'obtention d'un matériau à utiliser comme absorbeur de lumière dans des dispositifs de conversion photovoltaïque, comme absorbeur de lumière dans des systèmes photocatalytiques ou photo-électrochimiques, dans des applications de conversion photonique "vers le haut" ou "vers le bas" (up-conversion ou down-conversion) ou dans des applications en spintronique ou dans des dispositifs de détection de rayonnement.
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