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1. WO2011002942 - GAIN CONTROL LINEARITY IN AN RF DRIVER AMPLIFIER TRANSMITTER

Publication Number WO/2011/002942
Publication Date 06.01.2011
International Application No. PCT/US2010/040682
International Filing Date 30.06.2010
IPC
H03G 1/00 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
GCONTROL OF AMPLIFICATION
1Details of arrangements for controlling amplification
H03F 3/72 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
72Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
CPC
H03F 1/223
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
22by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
223with MOSFET's
H03F 2203/7206
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2203Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
72Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
7206the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias voltage in the amplifier
H03F 2203/7236
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2203Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
72Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
7236the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
H03F 3/195
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
189High frequency amplifiers, e.g. radio frequency amplifiers
19with semiconductor devices only
195in integrated circuits
H03F 3/245
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
24of transmitter output stages
245with semiconductor devices only
H03F 3/72
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
72Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
Applicants
  • QUALCOMM INCORPORATED [US]/[US] (AllExceptUS)
  • GODBOLE, Devavrata, V. [IN]/[US] (UsOnly)
Inventors
  • GODBOLE, Devavrata, V.
Agents
  • MOBARHAN, Ramin
Priority Data
12/636,63711.12.2009US
61/222,06130.06.2009US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) GAIN CONTROL LINEARITY IN AN RF DRIVER AMPLIFIER TRANSMITTER
(FR) LINÉARITÉ DE COMMANDE DE GAIN DANS UN ÉMETTEUR D'AMPLIFICATEUR D'ATTAQUE RF
Abstract
(EN)
An exemplary apparatus is disclosed that comprises a plurality of voltage to current transducers to convert an input signal voltage into a plurality of input signal currents and a cascode stage. The cascode stage is coupled to the voltage to current transducers to provide amplifier gain control. The cascode stage comprises a thin gate oxide transistor and a thick gate oxide transistor.
(FR)
Un appareil à titre d'exemple de l'invention comprend une pluralité de transducteurs tension à courant pour convertir un signal de tension d'entrée en une pluralité de signaux de courant d'entrée et un étage cascode. L'étage cascode est couplé aux transducteurs tension à courant pour fournir une commande de gain d'amplificateur. L'étage cascode comprend un transistor à oxyde de grille mince et un transistor à oxyde de grille épais.
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