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1. WO2011002612 - CIRCUIT STRUCTURE AND METHOD FOR PROGRAMMING AND RE-PROGRAMMING A LOW POWER, MULTIPLE STATES, ELECTRONIC FUSE(E-FUSE)

Publication Number WO/2011/002612
Publication Date 06.01.2011
International Application No. PCT/US2010/038934
International Filing Date 17.06.2010
IPC
H01L 21/82 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
H01L 27/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
CPC
G11C 11/5692
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
5692read-only digital stores using storage elements with more than two stable states
G11C 17/16
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
17Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
14in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
16using electrically-fusible links
H01L 23/5252
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
525with adaptable interconnections
5252comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
H01L 23/5256
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
525with adaptable interconnections
5256comprising fuses, i.e. connections having their state changed from conductive to non-conductive
H01L 27/101
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
101including resistors or capacitors only
H01L 27/112
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
Applicants
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US] (AllExceptUS)
  • ABOU-KHALIL, Michel, J. [CA]/[US] (UsOnly)
  • LEE, Tom, C. [US]/[US] (UsOnly)
  • LI, Junjun [CN]/[US] (UsOnly)
  • GAUTHIER, Robert, J., Jr. [US]/[US] (UsOnly)
  • PUTNAM, Christopher, S. [US]/[US] (UsOnly)
  • MITRA, Souvick [IN]/[US] (UsOnly)
Inventors
  • ABOU-KHALIL, Michel, J.
  • LEE, Tom, C.
  • LI, Junjun
  • GAUTHIER, Robert, J., Jr.
  • PUTNAM, Christopher, S.
  • MITRA, Souvick
Agents
  • CANALE, Anthony, J.
Priority Data
12/496,00201.07.2009US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) CIRCUIT STRUCTURE AND METHOD FOR PROGRAMMING AND RE-PROGRAMMING A LOW POWER, MULTIPLE STATES, ELECTRONIC FUSE(E-FUSE)
(FR) STRUCTURE DE CIRCUIT ET PROCÉDÉ DE PROGRAMMATION ET REPROGRAMMATION D'UN FUSIBLE ÉLECTRONIQUE À ÉTATS MULTIPLES ET FAIBLE PUISSANCE
Abstract
(EN)
Disclosed are embodiments of an e-fuse programming/re-programming circuit. In one embodiment, the e-fuse (150) has two short high atomic diffusion resistance conductor layers (110, 130) positioned on opposite sides (121, 122) and at a same end (123) of a long low atomic diffusion resistance conductor layer (120). A voltage source (170) is used to vary the polarity and, optionally, the magnitude of voltage applied to the terminals (first terminal = 170/161/110; second terminal = 170/162/130; third terminal = 170/163/proximate end 123 of conductor layer 120; and, fourth terminal = 170/164/distal end 124 of conductor layer 120) in order to control bi-directional flow of electrons within the long conductor layer and, thereby formation of opens and/or shorts at the long conductor layer-short conductor layer interfaces (125, 126). The formation of such opens and/or shorts can be used to achieve different programming states (11, 01, 10, 00). Other circuit structure embodiments incorporate e-fuses (650) with additional conductor layers and additional terminals so as to allow for even more programming states. Also disclosed are embodiments of associated e-fuse programming and re-programming methods.
(FR)
La présente invention concerne des modes de réalisation d'un circuit de programmation/reprogrammation à fusible électronique. Dans un mode de réalisation, le fusible électronique (150) comporte deux couches conductrices courtes à haute résistance à la diffusion atomique (110, 130) positionnées sur des côtés opposés (121, 122) et à une même extrémité (123) d'une couche conductrice longue à faible résistance à la diffusion atomique (120). Une source de tension (170) est utilisée pour varier la polarité et, facultativement, l'amplitude de tension appliquée sur les bornes (première borne = 170/161/110 ; deuxième borne = 170/162/130 ; troisième borne = 170/163/extrémité proximale 123 de la couche conductrice 120 ; et, quatrième borne = 170/164/extrémité distale 124 de la couche conductrice 120) afin de commander le flux bidirectionnel d'électrons à l'intérieur de la longue couche conductrice et, ainsi la formation d'ouvertures et/ou de courts-circuits dans les interfaces longue couche conductrice-courte couche conductrice (125, 126). La formation de telles ouvertures et/ou de tels courts-circuits peut être utilisée pour atteindre des états différents de programmation (11, 01, 10, 00). D'autres modes de réalisation de structure de circuit incorporent des fusibles électroniques (650) avec des couches conductrices supplémentaires et des bornes supplémentaires afin de permettre encore plus d'états de programmation. La présente invention concerne également des modes de réalisation de procédés associés de programmation et reprogrammation à fusible électronique.
Also published as
GB1200546.8
Latest bibliographic data on file with the International Bureau