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1. WO2011001974 - CU-GA TARGET AND METHOD FOR PRODUCING SAME

Publication Number WO/2011/001974
Publication Date 06.01.2011
International Application No. PCT/JP2010/061050
International Filing Date 29.06.2010
IPC
C23C 14/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
B22F 1/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
1Special treatment of metallic powder, e.g. to facilitate working, to improve properties; Metallic powders per se, e.g. mixtures of particles of different composition
B22F 3/14 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
3Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor
12Both compacting and sintering
14simultaneously
C22C 1/04 2006.01
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
1Making non-ferrous alloys
04by powder metallurgy
C22C 9/00 2006.01
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
9Alloys based on copper
C22C 28/00 2006.01
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
28Alloys based on a metal not provided for in groups C22C5/-C22C27/103
CPC
B22F 2998/10
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER
2998Supplementary information concerning processes or compositions relating to powder metallurgy
10Processes characterised by the sequence of their steps
C22C 1/0425
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
1Making alloys
04by powder metallurgy
0425Copper-based alloys
C22C 1/0483
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
1Making alloys
04by powder metallurgy
0483Alloys based on the low melting point metals Zn, Pb, Sn, Cd, In or Ga
C22C 28/00
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
28Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
C22C 9/00
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
9Alloys based on copper
C23C 14/3414
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
3407Cathode assembly for sputtering apparatus, e.g. Target
3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Applicants
  • JX日鉱日石金属株式会社 JX Nippon Mining & Metals Corporation [JP]/[JP] (AllExceptUS)
  • 生澤 正克 IKISAWA, Masakatsu [JP]/[JP] (UsOnly)
  • 高見 英生 TAKAMI, Hideo [JP]/[JP] (UsOnly)
  • 田村 友哉 TAMURA, Tomoya [JP]/[JP] (UsOnly)
Inventors
  • 生澤 正克 IKISAWA, Masakatsu
  • 高見 英生 TAKAMI, Hideo
  • 田村 友哉 TAMURA, Tomoya
Agents
  • 小越 勇 OGOSHI, Isamu
Priority Data
2009-15690501.07.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) CU-GA TARGET AND METHOD FOR PRODUCING SAME
(FR) CIBLE EN CU-GA ET SON PROCÉDÉ DE PRODUCTION
(JA) Cu-Gaターゲット及びその製造方法
Abstract
(EN)
Disclosed is a sintered Cu-Ga alloy sputtering target which is characterized by being composed of a sintered Cu-Ga alloy that has a Ga concentration of 20-60 at%, a relative density of not less than 97%, an average particle diameter of 5-30 μm, and a metal impurity content of less than 10 ppm. For obtaining the sintered Cu-Ga alloy sputtering target, the metal impurity concentration in the starting material is decreased and entrance of metal impurities from metal impurity producing materials is prevented during the production process by a powder method. Consequently, the Cu-Ga target has high density and low metal impurity concentration. Also disclosed is a low-cost method for producing the Cu-Ga target.
(FR)
Cette invention concerne une cible de pulvérisation cathodique en alliage de Cu-Ga fritté caractérisée en ce qu'elle est composée d'un alliage de Cu-Ga fritté présentant une concentration en Ga allant de 20 à 60 %, une densité relative supérieure ou égale à 97 %, un diamètre moyen des particules allant de 5 à 30 μm, et une teneur en impuretés métalliques inférieure à 10 ppm. Pour l'obtention de la cible de pulvérisation cathodique en alliage de Cu-Ga fritté, la concentration en impuretés métalliques est réduite dans la matière première et l'admission d'impuretés métalliques provenant de matières produisant des impuretés métalliques est empêchée pendant le procédé de production par une technique de la métallurgie des poudres. Ainsi, la cible en Cu-Ga a une densité élevée et une faible concentration en impuretés métalliques. L'invention concerne aussi un procédé de production à coût réduit de la cible en Cu-Ga.
(JA)
【課題】Ga濃度が20~60at%であるCu-Ga合金焼結体であって、相対密度が97%以上、平均粒径が5~30μm、金属不純物の含有量が10ppm未満であること特徴とするCu-Ga合金焼結体スパッタリングターゲット。原料中の金属不純物濃度を少なくすると共に、粉末法での製造プロセス中の金属不純物構成材からの混入を防止する。高密度であって、金属不純物濃度が低いCu-Gaターゲット及びその低コスト製造方法を提供する。
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Latest bibliographic data on file with the International Bureau