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1. WO2011001919 - METHOD FOR PRODUCING SILICON, SILICON, AND PANEL FOR SOLAR CELL

Publication Number WO/2011/001919
Publication Date 06.01.2011
International Application No. PCT/JP2010/060903
International Filing Date 25.06.2010
IPC
C01B 33/037 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33Silicon; Compounds thereof
02Silicon
037Purification
CPC
C01B 33/02
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
33Silicon; Compounds thereof
02Silicon
C01B 33/037
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
33Silicon; Compounds thereof
02Silicon
037Purification
H01L 31/182
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
1804comprising only elements of Group IV of the Periodic System
182Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
Y02E 10/546
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
546Polycrystalline silicon PV cells
Y02P 70/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
70Climate change mitigation technologies in the production process for final industrial or consumer products
50Manufacturing or production processes characterised by the final manufactured product
Applicants
  • 三菱化学株式会社 MITSUBISHI CHEMICAL CORPORATION [JP]/[JP] (AllExceptUS)
  • 有田 陽二 ARITA Yoji (UsOnly)
  • 米田 隆志 YONEDA Takashi (UsOnly)
Inventors
  • 有田 陽二 ARITA Yoji
  • 米田 隆志 YONEDA Takashi
Agents
  • 濱田 百合子 HAMADA Yuriko
Priority Data
2009-15900303.07.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING SILICON, SILICON, AND PANEL FOR SOLAR CELL
(FR) PROCÉDÉ DE PRODUCTION DE SILICIUM, SILICIUM ET PANNEAU POUR UNE CELLULE SOLAIRE
(JA) シリコンの製造方法、シリコンおよび太陽電池用パネル
Abstract
(EN)
Disclosed is a method for producing silicon, which is characterized by comprising a step wherein molten silicon containing impurities and a molten salt are brought into contact with each other in a container, so that the impurities in the molten silicon and the molten salt are reacted with each other and the impurities are removed from the system.
(FR)
L'invention porte sur un procédé de production de silicium, qui est caractérisé par le fait qu'il comprend une étape suivant laquelle du silicium fondu contenant des impuretés et un sel fondu sont amenés en contact l'un avec l'autre dans un conteneur, de telle sorte que les impuretés dans le silicium fondu et le sel fondu sont mis à réagir l'une avec l'autre et les impuretés sont retirées du système.
(JA)
 不純物を含む溶融シリコンと溶融塩とを容器内で接触させ、該溶融シリコン中の不純物と溶融塩とを反応させ、該不純物を系外に除去する工程を含むことを特徴とするシリコンの製造方法。
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