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1. WO2011001818 - SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Publication Number WO/2011/001818
Publication Date 06.01.2011
International Application No. PCT/JP2010/060105
International Filing Date 15.06.2010
IPC
H01L 21/52 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
52Mounting semiconductor bodies in containers
B23K 35/26 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
35Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
22characterised by the composition or nature of the material
24Selection of soldering or welding materials proper
26with the principal constituent melting at less than 400°C
C22C 12/00 2006.01
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
12Alloys based on antimony or bismuth
C22C 13/02 2006.01
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
13Alloys based on tin
02with antimony or bismuth as the next major constituent
CPC
B23K 35/262
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
35Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
22characterised by the composition or nature of the material
24Selection of soldering or welding materials proper
26with the principal constituent melting at less than 400 degrees C
262Sn as the principal constituent
B23K 35/264
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
35Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
22characterised by the composition or nature of the material
24Selection of soldering or welding materials proper
26with the principal constituent melting at less than 400 degrees C
264Bi as the principal constituent
B32B 15/01
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
15Layered products comprising ; a layer of; metal
01all layers being exclusively metallic
C22C 12/00
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
12Alloys based on antimony or bismuth
C22C 13/02
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
13Alloys based on tin
02with antimony or bismuth as the next major constituent
H01L 2224/29
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
Applicants
  • 株式会社日立製作所 HITACHI, LTD. [JP]/[JP] (AllExceptUS)
  • 池田 靖 IKEDA, Osamu [JP]/[JP] (UsOnly)
  • 芹沢 弘二 SERIZAWA, Koji [JP]/[JP] (UsOnly)
Inventors
  • 池田 靖 IKEDA, Osamu
  • 芹沢 弘二 SERIZAWA, Koji
Agents
  • 筒井 大和 TSUTSUI, Yamato
Priority Data
2009-15724801.07.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEURS ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEURS
(JA) 半導体装置および半導体装置の製造方法
Abstract
(EN)
Disclosed is a semiconductor device wherein flash is suppressed when reflow soldering is performed, stability of a semiconductor element connecting interface is ensured, and connection reliability with respect to thermal stress is improved. The semiconductor device is provided with: a semiconductor element (1) having an Ni electrode (14); an Ni-plated frame; an Sn-Bi-Cu lead-free solder (3) which connects the Ni electrode (14) of the semiconductor element (1) to the Ni-plated frame; and a resin which seals the periphery of the semiconductor element (1).
(FR)
L'invention porte sur un dispositif à semi-conducteurs dans lequel des bavures sont supprimées lorsqu'un soudage par refusion est réalisé, la stabilité d'une interface de connexion d'élément à semi-conducteurs est assurée, et la fiabilité de connexion par rapport aux contraintes thermiques est améliorée. Le dispositif à semi-conducteurs comprend un élément à semi-conducteurs (1) ayant une électrode en Ni (14) ; une structure revêtue de Ni ; une soudure sans plomb Sn-Bi-Cu (3) qui raccorde l'électrode en Ni (14) de l'élément à semi-conducteurs (1) à la structure revêtue de Ni ; et une résine qui scelle la périphérie de l'élément à semi-conducteurs (1).
(JA)
 リフローはんだ付け時のフラッシュを抑止し、半導体素子接続界面の安定性を確保し、熱応力に対する接続信頼性を向上することができる半導体装置である。半導体装置において、Ni電極14を有する半導体素子1と、Niめっきを施したフレームと、半導体素子1のNi電極14をNiめっきを施したフレームに接続するSn-Bi-Cu系鉛フリーはんだ3と、半導体素子1の周囲を封止するレジンとを備えた。
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