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1. WO2011001499 - ELECTRONIC PART MANUFACTURING METHOD AND ELECTRONIC PART MANUFACTURED BY THE METHOD

Publication Number WO/2011/001499
Publication Date 06.01.2011
International Application No. PCT/JP2009/061897
International Filing Date 30.06.2009
IPC
H05K 3/12 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3Apparatus or processes for manufacturing printed circuits
10in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
12using printing techniques to apply the conductive material
B41M 1/02 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
MPRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
1Inking and printing with a printer's forme
02Letterpress printing, e.g. book printing
H01L 21/288 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283Deposition of conductive or insulating materials for electrodes
288from a liquid, e.g. electrolytic deposition
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 51/05 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
CPC
H01L 51/0013
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0013using non liquid printing techniques, e.g. thermal transfer printing from a donor sheet
H01L 51/0016
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0014for changing the shape of the device layer, e.g. patterning
0016lift off techniques
H01L 51/003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
003using a temporary substrate
H05K 1/0296
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
1Printed circuits
02Details
0296Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
H05K 2203/0108
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
2203Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
01Tools for processing; Objects used during processing
0104for patterning or coating
0108Male die used for patterning, punching or transferring
H05K 2203/0528
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
2203Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
05Patterning and lithography; Masks; Details of resist
0502Patterning and lithography
0528Patterning during transfer, i.e. without preformed pattern, e.g. by using a die, a programmed tool or a laser
Applicants
  • DIC株式会社 DIC CORPORATION [JP]/[JP] (AllExceptUS)
  • 高武 正義 KOTAKE, Masayoshi [JP]/[JP] (UsOnly)
Inventors
  • 高武 正義 KOTAKE, Masayoshi
Agents
  • 河野 通洋 KONO, Michihiro
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ELECTRONIC PART MANUFACTURING METHOD AND ELECTRONIC PART MANUFACTURED BY THE METHOD
(FR) PROCÉDÉ DE FABRICATION DE COMPOSANT ÉLECTRONIQUE ET COMPOSANT ÉLECTRONIQUE FABRIQUÉ PAR LE PROCÉDÉ
(JA) 電子部品の製造方法および該方法で製造された電子部品
Abstract
(EN)
Provided is a new electronic part manufacturing method which enables reduction of the number of steps of the superposed printing, a high accuracy of a superposed pattern position (alignment accuracy), and substantially non-stepped layering, which in turn improves productivity and dimensional accuracy, and eliminates defects.  The method includes a step for forming a composite ink pattern layer on a mold releasing surface of a transfer plate by using the relief offset method and simultaneously performing inverse transfer of the composite ink pattern layer onto a printing object.  Various types of organic transistor elements are formed by combining a conductive ink, an insulating ink, and an ink containing a semiconductor.
(FR)
L'invention porte sur un nouveau procédé de fabrication de composant électronique qui permet une réduction du nombre d'étapes de l'impression superposée, une précision élevée d'une position de motif superposé (précision d'alignement), et une stratification sensiblement non échelonnée, ce qui améliore la productivité et la précision dimensionnelle et élimine des défauts. Le procédé comprend une étape de formation d'une couche de motif d'encre composite sur une surface de démoulage d'une plaque de transfert par utilisation du procédé offset et de réalisation simultanée d'un transfert inverse de la couche de motif d'encre composite sur un objet d'impression. Différents types d'éléments de transistor organique sont formés par combinaison d'une encre conductrice, d'une encre isolante et d'une encre contenant un semi-conducteur.
(JA)
 重ね印刷工数の低減、精密な重ねパターン位置精度(アラインメント精度)および、実質的に無段差の積層を可能とすることにより、生産性の向上、寸法精度の向上、欠損・欠陥解消を可能とする新規な電子部品の製造方法を提供する。凸版オフセット法を用いて転写板の離型性面上に、複合インキパターン層を形成した後、該複合インキパターン層を被印刷体上に同時に反転転写する工程を有する電子部品の製造方法。導電性インキ、絶縁性インキ及び半導体を含有するインキを組み合わせることで、各種有機トランジスタ素子を形成する。
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