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Machine translation
1. (WO2010151857) METHOD FOR FORMING III-V SEMICONDUCTOR STRUCTURES INCLUDING ALUMINUM-SILICON NITRIDE PASSIVATION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/151857    International Application No.:    PCT/US2010/040137
Publication Date: 29.12.2010 International Filing Date: 28.06.2010
IPC:
H01L 21/31 (2006.01), H01L 21/318 (2006.01), H01L 29/778 (2006.01), H01L 21/336 (2006.01)
Applicants: CORNELL UNIVERSITY [US/US]; 395 Pine Tree Road Suite 310 Ithaca, New York 14850 (US) (For All Designated States Except US).
SHEALY, James R. [US/US]; (US) (For US Only).
BROWN, Richard [US/US]; (US) (For US Only)
Inventors: SHEALY, James R.; (US).
BROWN, Richard; (US)
Agent: GREENER, William; 10 Brown Road Suite 201 Bond, Schoeneck & King, PLLC Ithaca, New York 14850 (US)
Priority Data:
61/220,978 26.06.2009 US
Title (EN) METHOD FOR FORMING III-V SEMICONDUCTOR STRUCTURES INCLUDING ALUMINUM-SILICON NITRIDE PASSIVATION
(FR) PROCÉDÉ POUR FORMER DES STRUCTURES SEMI-CONDUCTRICES III-V, À PASSIVATION PAR NITRURE D'ALUMINIUM-SILICIUM
Abstract: front page image
(EN)A method for fabricating a semiconductor structure includes forming a semiconductor layer over a substrate and forming an aluminum-silicon nitride layer upon the semiconductor layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.
(FR)La présente invention concerne un procédé pour fabriquer une structure semi-conductrice, comprenant la formation d'une couche semi-conductrice sur un substrat et la formation d'une couche de nitrure d'aluminium-silicium sur la couche semi-conductrice. Lorsque la couche semi-conductrice comprend en particulier un matériau semi-conducteur III-V, tel qu'un matériau semi-conducteur de nitrure du groupe III ou un matériau semi-conducteur de nitrure de gallium, le matériau de nitrure d'aluminium-silicium fournit une passivation supérieure par rapport au matériau de nitrure de silicium.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)