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1. (WO2010150864) CIS-BASED THIN FILM SOLAR CELL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/150864    International Application No.:    PCT/JP2010/060793
Publication Date: 29.12.2010 International Filing Date: 18.06.2010
IPC:
H01L 31/04 (2006.01), H01L 21/363 (2006.01)
Applicants: Showa Shell Sekiyu K.K. [JP/JP]; 3-2, Daiba 2-chome, Minato-ku, Tokyo 1358074 (JP) (For All Designated States Except US).
HAKUMA, Hideki [JP/JP]; (JP) (For US Only).
SUGIMOTO, Hiroki [JP/JP]; (JP) (For US Only).
KIJIMA, Shunsuke [JP/JP]; (JP) (For US Only).
TANAKA, Yoshiaki [JP/JP]; (JP) (For US Only)
Inventors: HAKUMA, Hideki; (JP).
SUGIMOTO, Hiroki; (JP).
KIJIMA, Shunsuke; (JP).
TANAKA, Yoshiaki; (JP)
Agent: AOKI, Atsushi; SEIWA PATENT & LAW, Toranomon 37 Mori Bldg., 5-1, Toranomon 3-chome, Minato-ku, Tokyo 1058423 (JP)
Priority Data:
2009-148768 23.06.2009 JP
Title (EN) CIS-BASED THIN FILM SOLAR CELL
(FR) CELLULE SOLAIRE À COUCHE MINCE À BASE DE CIS
(JA) CIS系薄膜太陽電池
Abstract: front page image
(EN)Disclosed is a CIS-based thin film solar cell having high photoelectric conversion efficiency. The CIS-based thin film solar cell comprises a high-strain-point glass substrate (1), an alkali-controling layer (2), a rear electrode layer (3), a p-type CIS-based light-absorptive layer (4), and n-type transparent conductive film (6) laminated in this order, wherein the alkali-controling layer (2) comprises a silica film having a film thickness of 2.00 to 10.00 nm and a refractive index of 1.450 to 1.500.
(FR)L'invention porte sur une cellule solaire à couche mince à base de CIS ayant un rendement de conversion photoélectrique élevé. La cellule solaire à couche mince à base de CIS comprend un substrat en verre à température inférieure de recuit élevée (1), une couche anti-alcalis (2), une couche d'électrode arrière (3), une couche d'absorption de lumière à base de CIS du type p (4), et un film conducteur transparent du type n (6) stratifiés dans cet ordre, la couche anti-alcalis (2) comprenant un film de silice ayant une épaisseur de film de 2,00 à 10,00 nm et un indice de réfraction de 1,450 à 1,500.
(JA)  要 約 書 高い光電変換効率を有するCIS系薄膜太陽電池を提供するために、CIS系薄膜太陽電池は、高歪 点ガラス基板(1)、アルカリ制御層(2)、裏面電極層(3)、p型CIS系光吸収層(4)、n型 透明導電膜(6)の順に積層されたCIS系薄膜太陽電池において、前記アルカリ制御層(2)を、膜 厚が2.00~10.00nm、屈折率が1.450~1.500の範囲のシリカ膜で形成する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)