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Pub. No.:    WO/2010/150653    International Application No.:    PCT/JP2010/059746
Publication Date: 29.12.2010 International Filing Date: 09.06.2010
Chapter 2 Demand Filed:    31.08.2010    
H01S 5/022 (2006.01)
Applicants: QD LASER INC. [JP/JP]; Keihin Bldg., 1st Fl., 1-1, Minamiwatarida-cho, Kawasaki-ku, Kawasaki-shi, Kanagawa 2100855 (JP) (For All Designated States Except US).
SUZUKI, Makoto [JP/JP]; (JP) (For US Only).
KANBE, Satoshi [JP/JP]; (JP) (For US Only)
Inventors: SUZUKI, Makoto; (JP).
KANBE, Satoshi; (JP)
Agent: KATAYAMA, Shuhei; Mitsui Sumitomo Marine Tepco Building, 6-1, Kyobashi 1-chome, Chuo-ku, Tokyo 1040031 (JP)
Priority Data:
2009-147983 22.06.2009 JP
(JA) 光半導体装置
Abstract: front page image
(EN)Disclosed is an optical semiconductor device provided with: a laser diode (14) provided on a stem (12), which is a mounting unit; a resin lens (20) that concentrates light emitted from the laser diode (14); and a lens support part (22) that is affixed to the stem (12), extends in the direction of the optical axis of the laser diode (14), and supports the resin lens (20). The lens support part (22) has a thermal expansion coefficient such that when the temperature rises, the distance between the laser diode (14) and the resin lens (20) increases.
(FR)La présente invention concerne un dispositif semi-conducteur optique étant équipé d'une diode laser (14) située sur une tige (12), qui est une unité de montage ; d'une lentille en résine (20) qui concentre la lumière émise par la diode laser (14) ; et d'une partie support de lentille (22) qui est fixée à la tige (12), s'étend dans la direction de l'axe optique de la diode laser (14) et soutient la lentille en résine (20). La partie support de lentille (22) possède un coefficient de dilatation thermique tel que, lorsque la température augmente, la distance comprise entre la diode laser (14) et la lentille en résine (20) augmente.
(JA) 本発明は、実装部であるステム12上に設けられたレーザダイオード14と、レーザダイオード14の出射光を集光する樹脂レンズ20と、ステム12上に固定され、レーザダイオード14の光軸方向に延在し、樹脂レンズ20を支持するレンズ支持部22と、を具備し、レンズ支持部22は、温度上昇に伴いレーザダイオード14と樹脂レンズ20との間隔を広げるような熱膨張係数を有する光半導体装置である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)