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Machine translation
1. (WO2010150114) CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/150114    International Application No.:    PCT/IB2010/052277
Publication Date: 29.12.2010 International Filing Date: 21.05.2010
IPC:
H01L 33/40 (2010.01), H01L 33/42 (2010.01), H01S 5/042 (2006.01)
Applicants: PHILIPS LUMILEDS LIGHTING COMPANY LLC [US/US]; 370 West Trimble Road San Jose, CA 95131-1008 (US) (For All Designated States Except US).
KONINKLIJKE PHILIPS ELECTRONICS N.V. [NL/NL]; Groenewoudseweg 1 NL-5621 BA Eindhoven (NL) (For All Designated States Except US).
EPLER, John E. [US/US]; (US) (For US Only).
DAVID, Aurelien J.F. [FR/US]; (US) (For US Only)
Inventors: EPLER, John E.; (US).
DAVID, Aurelien J.F.; (US)
Agent: BEKKERS, Joost, J.J.; High Tech Campus Building 44 NL-5656 AE Eindhoven (NL)
Priority Data:
12/491,976 25.06.2009 US
Title (EN) CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE
(FR) CONTACT POUR UN DISPOSITIF ÉLECTROLUMINESCENT À SEMI-CONDUCTEURS
Abstract: front page image
(EN)Embodiments of the invention include a semiconductor structure comprising a Ill-nitride light emitting layer (24) disposed between an n-type region (22) and a p-type region (26). A contact disposed on the p-type region includes a transparent conductive material (28) in direct contact with the p-type region (26), a reflective metal layer (34), and a transparent insulating material (30) disposed between the transparent conductive layer (28) and the reflective metal layer (34). In a plurality of openings (32) in the transparent insulating material (30), the transparent conductive material (28) is in direct contact with the reflective metal layer.
(FR)L'invention concerne une structure semi-conductrice comprenant une couche électroluminescente de nitrure III disposée entre une région de type n et une région de type p. Un contact disposé sur la région de type p comprend un matériau conducteur transparent en contact direct avec la région de type p, une couche métallique réfléchissante et un matériau isolant transparent disposé entre la couche conductrice transparente et la couche métallique réfléchissante. Dans une pluralité d'ouvertures du matériau isolant transparent, le matériau conducteur transparent est en contact direct avec la couche métallique réfléchissante.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)