WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2010148257) CONFIGURABLE WIDE TUNING RANGE OSCILLATOR CORE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/148257    International Application No.:    PCT/US2010/039089
Publication Date: 23.12.2010 International Filing Date: 17.06.2010
IPC:
H03B 5/12 (2006.01)
Applicants: QUALCOMM INCORPORATED [US/US]; Attn: International IP Administration 5775 Morehouse Drive San Diego, California 92121 (US) (For All Designated States Except US).
RANGARAJAN, Rajagopalan [IN/US]; (US) (For US Only).
MISHRA, Chinmaya [IN/US]; (US) (For US Only)
Inventors: RANGARAJAN, Rajagopalan; (US).
MISHRA, Chinmaya; (US)
Agent: XU, Jiayu; Attn: International IP Administration 5775 Morehouse Drive San Diego, Califonia 92121 (US)
Priority Data:
12/486,607 17.06.2009 US
Title (EN) CONFIGURABLE WIDE TUNING RANGE OSCILLATOR CORE
(FR) NOYAU D'OSCILLATEUR À LARGE GAMME D'ACCORD CONFIGURABLE
Abstract: front page image
(EN)An oscillator includes a resonator, a first and a second p-type transistor, and a first and a second n-type transistor. The resonator has a first terminal and a second terminal. The first p-type transistor is switchably connected to the first terminal while the second p-type transistor is switchably connected to the second terminal. A first drain of the first n-type transistor and the second drain of the second n-type transistor are electrically connected to the first terminal and the second terminal, respectively. The oscillator is capable of operating in an NMOS only mode and in a CMOS mode.
(FR)La présente invention concerne un oscillateur, comprenant un résonateur, un premier et un second transistor de type p, et un premier et un second transistor de type n. Le résonateur comporte une première borne et une seconde borne. Le premier transistor de type p est connecté, de manière commutable, à la première borne, tandis que le second transistor de type n est connecté, de manière commutable, à la seconde borne. Un premier drain du premier transistor de type p et le second drain du second transistor de type n sont électriquement connectés à la première borne et à la seconde borne, respectivement. L'oscillateur est capable de fonctionner en mode MOS à canal N seulement, et en mode MOS complémentaire.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)