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Machine translation
1. (WO2010147361) PROCESS CHAMBER PROTECTIVE SYSTEM OF SINGLE CRYSTAL SILICON INGOT GROWING APPARATUS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/147361    International Application No.:    PCT/KR2010/003833
Publication Date: 23.12.2010 International Filing Date: 15.06.2010
IPC:
C30B 15/20 (2006.01), C30B 35/00 (2006.01)
Applicants: QUALIFLOW NARATECH CO., LTD. [KR/KR]; #464, Songma-Ri, Daegot-Myun, Gimpo-si Gyeonggi-Do 415-855 (KR) (For All Designated States Except US).
LEE, Jong Gu [KR/KR]; (KR) (For US Only)
Inventors: LEE, Jong Gu; (KR)
Agent: PATENT LAW FIRM GRAND KOREA; 2F Bubong Bldg. 735-36 Yeoksam-dong, Gangnam-gu Seoul 135-080 (KR)
Priority Data:
10-2009-0053261 16.06.2009 KR
Title (EN) PROCESS CHAMBER PROTECTIVE SYSTEM OF SINGLE CRYSTAL SILICON INGOT GROWING APPARATUS
(FR) SYSTÈME DE PROTECTION DE CHAMBRE DE TRAITEMENT D'UN APPAREIL DE CROISSANCE D'UN LINGOT DE SILICIUM MONOCRISTALLIN
(KO) 단결정 실리콘 잉곳 성장장치의 프로세스 용기 보호 시스템
Abstract: front page image
(EN)The present invention relates to a process chamber of a single crystal silicon ingot growing apparatus, and particularly, to a method for protecting, from a high temperature, the process chamber which is a main component of the apparatus for growing a single crystal silicon ingot which serves as a base material of a silicon wafer. More particularly, the present invention relates to a method which forms a coolant guide line in the process chamber to maintain a smooth flow of a coolant and thus protect the process chamber from high temperature heat of 1000°C or higher emitted from a heater. For this, the present invention installs a coolant guide line in the upper portion of a space formed between an outer chamber and an inner chamber of the process chamber, and injects a coolant to a coolant inlet installed in the lower portion of the outer chamber of the process chamber to allow the coolant to smoothly circulate and be discharged through a coolant outlet installed in the upper portion of the outer chamber of the process chamber, thereby cooling the high temperature heat of 1000°C or higher generated from the heater in the process chamber and thus protecting the process chamber from the high temperature heat. The thus-configured system of the present invention protects the process chamber from high temperature heat through a simple configuration.
(FR)La présente invention porte sur une chambre de traitement d'un appareil de croissance d'un lingot de silicium monocristallin, et en particulier, sur un procédé de protection, vis-à-vis d'une température élevée, de la chambre de traitement qui est un composant principal de l'appareil pour la croissance d'un lingot de silicium monocristallin, lequel sert de matière de base d'une tranche de silicium. Plus particulièrement, la présente invention porte sur un procédé qui forme une conduite de guidage d'un fluide de refroidissement dans la chambre de traitement pour maintenir un écoulement sans à-coups d'un fluide de refroidissement et protéger ainsi la chambre de traitement vis-à-vis d'une chaleur à haute température de 1 000°C ou plus émise par un dispositif de chauffage. Pour ceci, la présente invention propose d'installer une conduite de guidage d'un fluide de refroidissement dans la partie supérieure d'un espace formé entre une chambre externe et une chambre interne de la chambre de traitement, et d'injecter un fluide de refroidissement dans une entrée de fluide de refroidissement installée dans la partie inférieure de la chambre externe de la chambre de traitement pour permettre au fluide de refroidissement de circuler sans à-coup et d'être déchargé à travers une sortie de fluide de refroidissement installée dans la partie supérieure de la chambre externe de la chambre de traitement, permettant ainsi de refroidir la chaleur à haute température de 1 000°C ou plus générée par le dispositif de chauffage dans la chambre de traitement et protégeant ainsi la chambre de traitement de la chaleur à haute température. Le système ainsi configuré de la présente invention protège la chambre de traitement d'une chaleur à haute température grâce à une configuration simple.
(KO)본 발명은 단결정 실리콘 잉곳 성장장치의 프로세스 용기에 관한 것으로, 특히 실리콘 웨이퍼의 기반이 되는 단결정 실리콘 잉곳 성장장치의 중요 구성품에 해당되는 프로세스 용기를 고온으로부터 보호하기 위한 방법에 관한 것으로, 보다 상세하게는 프로세스 용기에 냉각수 가이드 라인을 형성하여 냉각수의 흐름을 원활하게 유지함으로써 히터에서 방출되는 섭씨 1000도 이상의 고온으로부터 프로세스 용기를 보호할 수 있는 방법에 관한 것이다. 이를 위하여 본 발명은 프로세스 용기의 외측 용기와 내측 용기 사이의 이격되어진 공간 상부에 냉각수 가이드 라인을 설치하고 프로세스 외측 용기 하부에 설치된 냉각수 주입구에 냉각수를 투입하여 프로세스 외측 용기 상부에 설치되어진 냉각수 배출구로 냉각수가 원활히 순환되어 배출되도록 구성함에 따라 프로세스 용기 내부의 히터에서 발생하는 섭씨 1000도 이상의 고온으로부터 프로세스 용기에 가해지는 열을 냉각시켜 프로세스 용기를 보호하는 것을 특징으로 한다. 상술한 바와 같이 구성함에 따라 복잡한 구성을 갖추지 않고 프로세스 용기를 고온으로부터 보호할 수 있는 특징을 가지고 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)