WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2010147356) WAFER PROCESSING BASE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/147356    International Application No.:    PCT/KR2010/003827
Publication Date: 23.12.2010 International Filing Date: 15.06.2010
IPC:
H01L 21/304 (2006.01)
Applicants: LG CHEM, LTD. [KR/KR]; 20 Yoido-dong, Youngdungpo-gu Seoul 150-721 (KR) (For All Designated States Except US).
KIM, Se Ra [KR/KR]; (KR) (For US Only).
JOO, Hyo Sook [KR/KR]; (KR) (For US Only).
CHANG, Suk Ky [KR/KR]; (KR) (For US Only).
SHIM, Jung Sup [KR/KR]; (KR) (For US Only)
Inventors: KIM, Se Ra; (KR).
JOO, Hyo Sook; (KR).
CHANG, Suk Ky; (KR).
SHIM, Jung Sup; (KR)
Agent: DANA PATENT LAW FIRM; 5th Floor, BYC Bldg., 648-1 Yeoksam-dong, Kangnam-gu Seoul 135-080 (KR)
Priority Data:
10-2009-0052945 15.06.2009 KR
Title (EN) WAFER PROCESSING BASE
(FR) BASE DE TRAITEMENT DE TRANCHE
(KO) 웨이퍼 가공용 기재
Abstract: front page image
(EN)The present invention relates to a wafer processing base. The present invention provides a base having excellent heat resistance and dimensional stability. In addition, the present invention provides a base which has a superior stress relaxation property to prevent breakage of a wafer caused by residual stresses, and which prevents the wafer from being damaged or bouncing by a non-uniform pressure applied during a wafer processing process, and which exhibits superior cutting property. Consequently, the base of the present invention can be valuably used as a processing sheet in a variety of wafer processing processes including dicing, back grinding, picking-up and so on.
(FR)La présente invention porte sur une base de traitement de tranche. L'invention réalise une base ayant une excellente résistance à la chaleur et une excellente stabilité dimensionnelle. En supplément, l'invention réalise une base qui possède une propriété supérieure de détente des contraintes pour éviter la rupture d'une tranche provoquée par des contraintes résiduelles et qui évite que la tranche ne soit endommagée ou ne saute sous l'effet d'une pression non uniforme appliquée pendant une opération de traitement de la tranche. Il en résulte que la base selon l'invention peut être valablement utilisée comme feuille de traitement dans diverses opérations de traitement de tranches, y compris le découpage des pastilles, le remeulage, la reprise etc.
(KO)본 발명은 웨이퍼 가공용 기재에 관한 것이다. 본 발명에서는, 우수한 내열성 및 치수 안정성을 나타내는 기재를 제공할 수 있다. 또한, 본 발명은, 응력 완화성이 탁월하여 잔류 응력에 의한 웨이퍼의 파손을 방지할 수 있고, 웨이퍼 가공 과정에서의 불균일한 압력의 인가에 의한 웨이퍼의 손상이나 비산 등을 억제할 수 있으며, 탁월한 절단성을 보이는 기재를 제공한다. 이에 따라 본 발명의 기재는, 다이싱, 백그라인딩 또는 픽업 등을 포함한 각종 웨이퍼 가공 공정에서의 가공용 시트로서 효과적으로 사용될 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)