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Pub. No.:    WO/2010/147304    International Application No.:    PCT/KR2010/002923
Publication Date: 23.12.2010 International Filing Date: 07.05.2010
H01L 33/20 (2010.01)
Applicants: THELEDS CO., LTD. [KR/KR]; 339-13 Jwahang-ri, Wonsam-myeon, Cheoin-gu, Yongin Si Gyeonggi-Do 449-871 (KR) (For All Designated States Except US).
YUH, Hwan-Kuk [KR/KR]; (KR) (For US Only).
CHOI, Won-Chul [KR/KR]; (KR) (For US Only).
LEE, Jong-Hee [KR/KR]; (KR) (For US Only).
MOON, Young-Boo [KR/KR]; (KR) (For US Only).
CHOI, Sung-Chul [KR/KR]; (KR) (For US Only)
Inventors: YUH, Hwan-Kuk; (KR).
CHOI, Won-Chul; (KR).
LEE, Jong-Hee; (KR).
MOON, Young-Boo; (KR).
CHOI, Sung-Chul; (KR)
Agent: SONG, Kyeong-Keun; 3rd Floor, Wealth Building 1621-25 Seocho-dong, Seocho-gu Seoul 137-878 (KR)
Priority Data:
10-2009-0053685 17.06.2009 KR
(KO) 방사각이 제어된 반도체 칩
Abstract: front page image
(EN)The present invention relates to a semiconductor chip with a controlled emission angle. The semiconductor chip according to the present invention comprises a substrate and light emitting elements formed on the substrate, wherein the substrate is formed such that the quantity of light emitted from the light emitting elements is controlled in accordance with the angle formed by an upper surface of the substrate and a normal vertical to the upper surface of the substrate. For this, at least one of the side surfaces of the substrate is inclined with respect to the upper surface of the substrate, and the upper surface of the substrate is formed into a concavo-convex surface.
(FR)L'invention porte sur une puce à semi-conducteur à angle d'émission réglable comportant un substrat et un élément photoémetteur formé sur le substrat, ledit substrat étant tel que la quantité de lumière émise par l'élément photoémetteur se règle en fonction de l'angle formé entre la surface supérieure du substrat et la normale à cette surface. A cette fin, l'une au moins des surfaces latérales du substrat est inclinée par rapport à la surface latérale du substrat, et la surface supérieure du substrat est de forme concavo-convexe.
(KO)본 발명은 방사각이 제어된 반도체 칩에 관한 것이다. 본 발명에 따른 반도체 칩은 기판과 기판 상에 형성된 발광소자를 구비하며, 기판의 상면과 수직한 법선을 기준 으로 법선과 이루는 각도에 따라 출력되는 광의 광량이 제어되도록, 기판이 형성된 다. 이를 위해, 기판의 옆면 중 적어도 하나는 기판의 상면과 기울어지게 형성되 고, 기판의 상면에는 요철이 형성될 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)