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1. (WO2010146846) PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/146846    International Application No.:    PCT/JP2010/003997
Publication Date: 23.12.2010 International Filing Date: 16.06.2010
IPC:
H01L 31/075 (2012.01)
Applicants: ULVAC, Inc. [JP/JP]; 2500, Hagisono, Chigasaki-shi, Kanagawa 2538543 (JP) (For All Designated States Except US).
IMAKITA, Kenichi [JP/JP]; (JP) (For US Only).
UCHIDA, Hiroto [JP/JP]; (JP) (For US Only).
ASARI, Shin [JP/JP]; (JP) (For US Only).
HASHIMOTO, Masanori [JP/JP]; (JP) (For US Only).
FUJINAGA, Tetsushi [JP/JP]; (JP) (For US Only).
KOBAYASHI, Tadamasa [JP/JP]; (JP) (For US Only).
WAKAI, Masafumi [JP/JP]; (JP) (For US Only).
ASAHINA, Shinichi [JP/JP]; (JP) (For US Only).
UE, Yoshinobu [JP/JP]; (JP) (For US Only).
NAKAMURA, Kyuzo [JP/JP]; (JP) (For US Only).
SAITO, Kazuya [JP/JP]; (JP) (For US Only).
SHIMIZU, Yasuo [JP/JP]; (JP) (For US Only)
Inventors: IMAKITA, Kenichi; (JP).
UCHIDA, Hiroto; (JP).
ASARI, Shin; (JP).
HASHIMOTO, Masanori; (JP).
FUJINAGA, Tetsushi; (JP).
KOBAYASHI, Tadamasa; (JP).
WAKAI, Masafumi; (JP).
ASAHINA, Shinichi; (JP).
UE, Yoshinobu; (JP).
NAKAMURA, Kyuzo; (JP).
SAITO, Kazuya; (JP).
SHIMIZU, Yasuo; (JP)
Agent: SHIGA, Masatake; 1-9-2, Marunouchi, Chiyoda-ku, Tokyo 1006620 (JP)
Priority Data:
2009-145691 18.06.2009 JP
2009-229881 01.10.2009 JP
Title (EN) PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE
(FR) DISPOSITIF DE CONVERSION PHOTOÉLECTRIQUE ET PROCÉDÉ DE PRODUCTION D'UN DISPOSITIF DE CONVERSION PHOTOÉLECTRIQUE
(JA) 光電変換装置及び光電変換装置の製造方法
Abstract: front page image
(EN)A photoelectric conversion device (10) is comprised of a substrate (1); a transparent conductive film (2) formed on the substrate (1); a first photoelectric conversion unit (3) which is composed of a first p-type semiconductor layer (31), a first i-type semiconductor layer (32), and a first n-type semiconductor layer (33), and is formed on the transparent conductive film (2); and a second photoelectric conversion unit (4) which is comprised of a second p-type semiconductor layer (41), i.e., a crystalline silicon type thin film, a second i-type semiconductor layer (42), a second n-type semiconductor layer (43), and a barrier layer (45), i.e., an i-type semiconductor layer composed of an amorphous silicon thin film provided between the second i-type semiconductor layer (42) and the second n-type semiconductor layer (43), and which is formed on the first photoelectric conversion unit (3).
(FR)Un dispositif de conversion photoélectrique (10) est composé de : un substrat (1) ; un film conducteur transparent (2) formé sur le substrat (1) ; une première unité de conversion photoélectrique (3) qui est composée d'une première couche semiconductrice de type p (31), d'une première couche semiconductrice de type i (32) et d'une première couche semiconductrice de type n (33) et qui est formée sur le film conducteur transparent (2) ; et une seconde unité de conversion photoélectrique (4) qui est composée d'une seconde couche semiconductrice de type p (41), c'est-à-dire un film mince de silicium cristallin, d'une seconde couche semiconductrice de type i (42), d'une seconde couche semiconductrice de type n (43) et d'une couche barrière (45), c'est-à-dire une couche semiconductrice de type i composée d'un film mince de silicium amorphe placé entre la seconde couche semiconductrice de type i (42) et la seconde couche semiconductrice de type n (43), et qui est formée sur la première unité de conversion photoélectrique (3).
(JA) この光電変換装置(10)は、基板(1)と、前記基板(1)上に形成された透明導電膜(2)と、第一p型半導体層(31),第一i型半導体層(32),及び第一n型半導体層(33)を含み、前記透明導電膜(2)上に形成された第一光電変換ユニット(3)と、結晶質のシリコン系薄膜である第二p型半導体層(41),第二i型半導体層(42),及び第二n型半導体層(43)と、前記第二i型半導体層(42)及び前記第二n型半導体層(43)の間に設けられたアモルファスシリコン系薄膜のi型半導体層であるバリア層(45)とを含み、前記第一光電変換ユニット(3)上に形成された第二光電変換ユニット(4)とを含む。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)