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Machine translation
1. (WO2010143476) DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/143476    International Application No.:    PCT/JP2010/057218
Publication Date: 16.12.2010 International Filing Date: 23.04.2010
IPC:
C30B 29/36 (2006.01)
Applicants: BRIDGESTONE CORPORATION [JP/JP]; 10-1, Kyobashi 1-chome, Chuo-ku, Tokyo 1048340 (JP) (For All Designated States Except US).
KONDO, Daisuke; (For US Only)
Inventors: KONDO, Daisuke;
Agent: MIYOSHI, Hidekazu; Toranomon Kotohira Tower, 2-8, Toranomon 1-chome, Minato-ku, Tokyo 1050001 (JP)
Priority Data:
2009-139253 10.06.2009 JP
Title (EN) DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS
(FR) DISPOSITIF PERMETTANT LA PRODUCTION DE MONOCRISTAUX DE CARBURE DE SILICIUM
(JA) 炭化珪素単結晶の製造装置
Abstract: front page image
(EN)Disclosed is a device (1) for producing single crystals, comprising: a crucible body (5) for holding a sublimation material; a lid (9) provided with a seed crystal-supporting member (7) at a position facing the sublimation material; a tubular guide member (11) extending from the neighborhood of the outer periphery of the seed crystal-supporting member (7) toward the sublimation material; and a heat-insulating material (21) that is positioned on the outer periphery side of at least one of the seed crystal-supporting member (7) and the guide member (11) and has a lower heat conductivity than single crystals (27), which is configured so that, when growing the single crystals (27) by heating the sublimation material (3) and the seed crystals, the heat-insulating material (21) makes the flow of the heat (H) from the sublimation material (3) toward the seed crystals concentrate in the seed crystals.
(FR)L'invention concerne un dispositif (1) permettant la production de monocristaux, comprenant : un corps de creuset (5) servant à contenir un matériau de sublimation ; un couvercle (9) pourvu d'un organe de support de germe cristallin (7) placé en face du matériau de sublimation ; un organe tubulaire de guidage (11) s'étendant à partir du voisinage de la périphérie externe de l'organe de support de germe cristallin (7) vers le matériau de sublimation ; et un matériau thermo-isolant (21) placé du côté de la périphérie externe d'au moins un organe choisi parmi l'organe de support de germe cristallin (7) et l'organe de guidage (11) et dont la conductivité thermique est inférieure à celle des monocristaux (27). Lors de la formation des monocristaux (27) par le chauffage du matériau de sublimation (3) et des germes cristallins, le matériau thermo-isolant (21) concentre dans les germes cristallins le flux de chaleur (H) provenant du matériau de sublimation (3).
(JA) 本発明による単結晶製造装置1は、昇華用原料を収容する坩堝本体5と、昇華用原料と対向する位置に種結晶支持部7を設けた蓋体9と、種結晶支持部7の外周近傍から昇華用原料に向けて筒状に延びるガイド部材11と、種結晶支持部7およびガイド部材11の少なくともいずれかの外周側に配設されると共に、単結晶27よりも熱伝導率が低く設定された断熱材21とを備え、昇華用原料3および種結晶を加熱して単結晶27を成長させるときに、昇華用原料3から種結晶に向かう熱Hの流れを断熱材21によって種結晶に集約させるように構成している。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)