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1. (WO2010143248) TUNNEL MAGNETIC RESISTANCE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/143248    International Application No.:    PCT/JP2009/060432
Publication Date: 16.12.2010 International Filing Date: 08.06.2009
IPC:
H01L 43/08 (2006.01), G11C 11/15 (2006.01), H01L 21/8246 (2006.01), H01L 27/105 (2006.01), H01L 29/82 (2006.01)
Applicants: HITACHI, LTD. [JP/JP]; 6-6, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1008280 (JP) (For All Designated States Except US).
YAMAMOTO Hiroyuki [JP/JP]; (JP) (For US Only).
TAKAHASHI Hiromasa [JP/JP]; (JP) (For US Only).
ITO Kenchi [JP/JP]; (JP) (For US Only).
HAYAKAWA Jun [JP/JP]; (JP) (For US Only).
YAMANOUCHI Michihiko [JP/JP]; (JP) (For US Only)
Inventors: YAMAMOTO Hiroyuki; (JP).
TAKAHASHI Hiromasa; (JP).
ITO Kenchi; (JP).
HAYAKAWA Jun; (JP).
YAMANOUCHI Michihiko; (JP)
Agent: HIRAKI Yusuke; Kamiya-cho MT Bldg. 19F, 3-20, Toranomon 4-chome, Minato-ku, Tokyo 1050001 (JP)
Priority Data:
Title (EN) TUNNEL MAGNETIC RESISTANCE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME
(FR) ÉLÉMENT EN TUNNEL À EFFET DE RÉSISTANCE MAGNÉTIQUE ET MÉMOIRE VIVE L'UTILISANT
(JA) トンネル磁気抵抗効果素子及びそれを用いたランダムアクセスメモリ
Abstract: front page image
(EN)Disclosed is a magnetic resistance effect element that uses a vertically magnetized material and has a reduced write current density. An area with thinner film thickness than the surrounding area is formed in the central part of a recording layer (10). Alternatively, an area that functions as a ferromagnetic body and that has an effective film thickness thinner than the surrounding area is formed in the central part of the recording layer.
(FR)L'invention concerne un élément à effet de résistance magnétique qui utilise un matériau aimanté verticalement et présente une densité de courant d'écriture réduite. Une zone caractérisée par une épaisseur de film inférieure à celle de la zone environnante est formée dans la partie centrale d'une couche (10) d'enregistrement. En variante, une zone faisant fonction de corps ferromagnétique et présentant une épaisseur effective de film inférieure à celle de la zone environnante est formée dans la partie centrale de la couche d'enregistrement.
(JA)垂直磁化材料を適用し、かつ書き込み電流密度を低減した磁気抵抗効果素子を提供する。 記録層10の中央部に、周囲よりも膜厚の薄い領域を形成する。もしくは、記録層の中央部に、強磁性体として機能する実効的な膜厚が周囲よりも薄い領域を形成する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)