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1. (WO2010143086) LED WITH REMOTE PHOSPHOR LAYER AND REFLECTIVE SUBMOUNT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/143086 International Application No.: PCT/IB2010/052085
Publication Date: 16.12.2010 International Filing Date: 11.05.2010
IPC:
H01L 33/50 (2010.01) ,H01L 33/56 (2010.01) ,H01L 33/46 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
56
Materials, e.g. epoxy or silicone resin
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44
characterised by the coatings, e.g. passivation layer or anti-reflective coating
46
Reflective coating, e.g. dielectric Bragg reflector
Applicants:
PHILIPS LUMILEDS LIGHTING COMPANY, LLC [US/US]; 370 West Trimble Road San Jose, CA 95131-1008, US (AllExceptUS)
KONINKLIJKE PHILIPS ELECTRONICS N.V. [NL/NL]; Groenewoudseweg 1 NL-5621 BA Eindhoven, NL (AllExceptUS)
DAVID, Aurelien J. [FR/US]; US (UsOnly)
ALDAZ, Rafael I. [ES/US]; US (UsOnly)
BUTTERWORTH, Mark [US/US]; US (UsOnly)
BIERHUIZEN, Serge J. [NL/US]; US (UsOnly)
Inventors:
DAVID, Aurelien J.; US
ALDAZ, Rafael I.; US
BUTTERWORTH, Mark; US
BIERHUIZEN, Serge J.; US
Agent:
BEKKERS, Joost, J.J.; High Tech Campus Building 44 NL-5656 AE Eindhoven, NL
Priority Data:
12/481,02109.06.2009US
Title (EN) LED WITH REMOTE PHOSPHOR LAYER AND REFLECTIVE SUBMOUNT
(FR) DIODE ÉLECTROLUMINESCENTE DOTÉE D'UNE COUCHE DE SUBSTANCE LUMINESCENTE À DISTANCE ET SUPPORT SECONDAIRE RÉFLÉCHISSANT
Abstract:
(EN) A light emitting device comprises a flip-chip light emitting diode (LED) die mounted on a submount (12). The top surface of the submount has a reflective layer. Over the LED die is molded a hemispherical first transparent layer (36). A low index of refraction layer (68) is then provided over the first transparent layer to provide TIR of phosphor light. A hemispherical phosphor layer (70) is then provided over the low index layer. A lens (72) is then molded over the phosphor layer. The reflection achieved by the reflective submount layer, combined with the TIR at the interface of the high index phosphor layer and the underlying low index layer, greatly improves the efficiency of the lamp. Other material may be used. The low index layer may be an air gap ( 46) or a molded layer (68). Instead of a low index layer, a distributed Bragg reflector (76) may be sputtered over the first transparent layer.
(FR) La présente invention a trait à un dispositif électroluminescent qui comprend une puce à diode électroluminescente de puce à protubérances (voyant DEL) montée sur un support secondaire (12). La surface supérieure du support secondaire est pourvue d'une couche réfléchissante. Une première couche transparente hémisphérique (36) est moulée sur la puce à diode électroluminescente. Un faible indice de couche de réfraction (68) est ensuite disposé au-dessus de la première couche transparente afin d'obtenir un spectre de l'infrarouge thermique (TIR) de lumière fluorescente. Une couche de substance luminescente hémisphérique (70) est ensuite disposée au-dessus de la couche à faible indice. Une lentille (72) est ensuite moulée au-dessus de la couche de substance luminescente. La réflexion obtenue par la couche du support secondaire réfléchissant, associée au spectre de l'infrarouge thermique à l'interface de la couche de substance luminescente à indice élevé et de la couche à faible indice sous-jacente, améliore grandement le rendement de la lampe. Une autre substance peut être utilisée. La couche à faible indice peut être un entrefer (46) ou une couche moulée (68). A la place d'une couche à faible indice, un réflecteur de Bragg réparti (76) peut être pulvérisé au-dessus de la première couche transparente.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2441098JP2012529766CN102460748KR1020120024951KR1020170036113