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Pub. No.:    WO/2010/142947    International Application No.:    PCT/GB2010/001117
Publication Date: 16.12.2010 International Filing Date: 08.06.2010
H01L 51/42 (2006.01)
Applicants: ISIS INNOVATION LIMITED [GB/GB]; Ewert House Ewert Place Summertown Oxford OX2 7SG (GB) (For All Designated States Except US).
SNAITH, Henry, J. [GB/GB]; (GB) (For US Only)
Inventors: SNAITH, Henry, J.; (GB)
Agent: DEHNS; St. Bride's House 10 Salisbury Square London EC4Y 8JD (GB)
Priority Data:
0909818.7 08.06.2009 GB
Abstract: front page image
(EN)The present invention provides a solid-state p-n heterojunction comprising a p-type material in contact with an n-type material wherein said n-type material comprises SnO2 having at least one surface-coating of a surface coating material having a higher band-gap than SnO2 and/or a conduction band edge closer to vacuum level than SnO2, such as MgO. The invention also provides optoelectronic devices such as solar cells or photo sensors comprising such a p-n heterojunction, and methods for the manufacture of such a heterojunction or device.
(FR)La présente invention porte sur une hétérojonction p-n semi-conductrice comprenant un matériau de type p en contact avec un matériau de type n, ledit matériau de type n comprenant SnO2 portant au moins un revêtement de surface d'un matériau de revêtement de surface ayant une bande interdite plus élevée que SnO2 et/ou un bord de bande de conduction plus proche du niveau de vide que SnO2, tel que MgO. L'invention porte également sur des dispositifs optoélectroniques tels que des cellules solaires ou des photocapteurs comprenant une telle hétérojonction p-n, et sur des procédés de fabrication d'une telle hétérojonction ou d'un tel dispositif.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)