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1. (WO2010141943) LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/141943 International Application No.: PCT/US2010/037623
Publication Date: 09.12.2010 International Filing Date: 07.06.2010
IPC:
H01L 33/00 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US/US]; 1111 Franklin Street 12th Floor Oakland, California 94607, US (AllExceptUS)
CHAKRABORTY, Arpan [IN/US]; US (UsOnly)
LIN, You-Da [CN/US]; US (UsOnly)
NAKAMURA, Shuji [US/US]; US (UsOnly)
DENBAARS, Steven, P. [US/US]; US (UsOnly)
Inventors:
CHAKRABORTY, Arpan; US
LIN, You-Da; US
NAKAMURA, Shuji; US
DENBAARS, Steven, P.; US
Agent:
GATES, George, H.; 6701 Center Drive West Suite 1050 Los Angeles, California 90045, US
Priority Data:
61/184,72905.06.2009US
Title (EN) LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
(FR) DIODES LASER NON POLAIRES ET SEMI-POLAIRES À GRANDE LONGUEUR D'ONDE À BASE DE (AL,GA,IN)N
Abstract:
(EN) A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower threshold current density and longer stimulated emission wavelength, compared to conventional laser diode structures, wherein the laser diode's (1) n-type layers are grown in a nitrogen carrier gas, (2) quantum well layers and barrier layers are grown at a slower growth rate as compared to other device layers (enabling growth of the p-type layers at higher temperature), (3) high Al content electron blocking layer enables growth of layers above the active region at a higher temperature, and (4) asymmetric AlGaN SPSLS allowed growth of high Al containing p- AlGaN layers. Various other techniques were used to improve the conductivity of the p-type layers and minimize the contact resistance of the contact layer.
(FR) Diode laser, tirée sur un substrat non polaire ou semi-polaire à erreur de découpe, présentant une plus faible densité de courant seuil et une plus grande longueur d'onde d'émission stimulée que les structures de diodes laser classiques, et comportant : (1) des couches du type n tirées dans un gaz porteur à l'azote, (2) des couches de puits quantiques et des couches d'arrêt tirées à une vitesse de tirage inférieure à celle associée à d'autres couches de dispositif (permettant le tirage des couches du type p à une température plus élevée), (3) une couche bloquant les électrons à haute teneur en Al permettant le tirage de couches au-dessus de la région active à une température plus élevée, et (4) des SPSL asymétriques à AlGaN permettant le tirage de couches p-AlGaN à forte teneur en Al. Diverses autres techniques ont été utilisées pour améliorer la conductivité des couches du type p et réduire au minimum la résistance de contact de la couche de contact.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
CN102460739