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Machine translation
1. (WO2010140725) METHOD FOR FORMING A THIN FILM METAL CONDUCTIVE LINE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/140725    International Application No.:    PCT/KR2009/003017
Publication Date: 09.12.2010 International Filing Date: 05.06.2009
IPC:
H01L 21/28 (2006.01), H01L 21/203 (2006.01), H01L 21/027 (2006.01)
Applicants: TOP ENGINEERING CO., LTD [KR/KR]; 811-26, Yeongtae-ri, Wollong-myeon, Paju-si Gyeonggi-do 413-813 (KR) (For All Designated States Except US).
KIM, Sang-hee [KR/KR]; (KR) (For US Only)
Inventors: KIM, Sang-hee; (KR)
Agent: HONESTY AND PATENT IP LAW FIRM; 8F, Dowon Bldg. 719-5, Yeoksam-dong Gangnam-gu Seoul 135-920 (KR)
Priority Data:
Title (EN) METHOD FOR FORMING A THIN FILM METAL CONDUCTIVE LINE
(FR) PROCÉDÉ PERMETTANT DE FORMER UNE LIGNE CONDUCTRICE MÉTALLIQUE À FILM MINCE
(KO) 박막 금속 전도선의 형성 방법
Abstract: front page image
(EN)The present invention relates to a method for forming a thin film metal conductive line for effectively preventing the occurrence of undercuts in the manufacture of a high-precision thin film metal conductive line required for a highly-integrated, high-frequency, and high-precision conductive substrate. The method comprises the steps of: forming a seed metal layer on a substrate surface; forming a first photoresist layer on the seed metal layer surface, and removing a portion of a photoresist film corresponding to a main metal layer pattern; using the first photoresist layer as a mask to form a Cu plating layer; removing the first photoresist layer, and then forming a second photoresist layer at a certain distance from the Cu plating layer; using the second photoresist layer as a mask to form an Ni plating layer enclosing the Cu plating layer, and an Au plating layer; and removing the second photoresist layer, and performing etching to remove an exposed portion of the seed metal layer. According to the method for forming a thin film metal conductive line of the present invention, during the manufacture of high-precision substrates for configuring high-precision circuits such as substrates for probe cards and multilevel interconnect substrates used for mobile communication components, the effect of preventing the occurrence of undercuts in thin film metal conductive lines is achieved.
(FR)La présente invention a trait à un procédé permettant de former une ligne conductrice métallique à film mince permettant d'empêcher efficacement l'occurrence de gravures sous-jacentes lors de la fabrication d'une ligne conductrice métallique à film mince de haute précision requise pour un substrat conducteur hautement intégré, à haute fréquence et de haute précision. Le procédé comprend les étapes consistant à : former une couche métallique de germe sur la surface d'un substrat ; former une première couche de résine photosensible sur la surface de la couche métallique de germe, et supprimer une partie d'un film de résine photosensible correspondant au motif d'une couche métallique principale ; utiliser la première couche de résine photosensible en tant que masque de manière à former une couche de revêtement métallique de Cu ; supprimer la première couche de résine photosensible, puis former une seconde couche de résine photosensible à une certaine distance de la couche de revêtement métallique de Cu ; utiliser la seconde couche de résine photosensible en tant que masque de manière à former une couche de revêtement métallique de Ni englobant la couche de revêtement métallique de Cu, et une couche de revêtement métallique de Au ; et supprimer la seconde couche de résine photosensible, puis procéder à la gravure en vue de supprimer une partie exposée de la couche métallique de germe. Selon le procédé permettant de former une ligne conductrice métallique à film mince selon la présente invention, au cours de la fabrication de substrats de haute précision permettant de configurer des circuits de haute précision tels que des substrats pour cartes de sonde et des substrats d'interconnexion à plusieurs niveaux utilisés pour les composants de communication mobile, il est possible d'obtenir l'effet empêchant l'occurrence de gravures sous-jacentes dans les lignes conductrices métalliques à film mince.
(KO)본 발명은 고집적, 고주파, 고정밀의 전도선 기판에 요구되는 초정밀의 박막 금속 전도선을 제조함에 있어 언더 컷 현상을 효과적으로 방지하는 박막 금속 전도선을 형성하는 방법에 관한 것으로, 기판 표면에 시드 금속층을 형성하는 단계, 상기 시드 금속층 표면에 제1 포토레지스트층을 형성하고 주 금속층 패턴에 해당하는 부분의 포토레지스트 필름을 제거하는 단계, 상기 제1 포토레지스트층을 마스크로 하여 Cu 도금층을 형성하는 단계, 상기 제1 포토레지스트층을 제거한 후 상기 Cu 도금층과 일정 간격을 띄워 제2 포토레지스트층을 형성하는 단계, 상기 제2 포토레지스트층을 마스크로 하여 상기 Cu 도금층을 에워싸는 Ni 도금층과 Au 도금층을 형성하는 단계, 상기 제2 포토레지스트층을 제거하고 상기 시드 금속층의 노출되는 부위를 제거하기 위해 에칭하는 단계를 포함하는 것을 특징으로 한다. 본 발명의 박막 금속 전도선의 형성 방법에 따르면, 프로브 카드용 기판 또는 이동통신 부품으로 사용되는 다층 배선 기판과 같은 고정밀 회로를 형성하는 고밀도 기판 제조시, 박막 금속 전도선의 언더 컷 현상을 방지할 수 있다는 효과가 얻어진다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)