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1. (WO2010140187) PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/140187 International Application No.: PCT/JP2009/002458
Publication Date: 09.12.2010 International Filing Date: 02.06.2009
Chapter 2 Demand Filed: 08.10.2010
IPC:
H01L 51/42 (2006.01) ,H01L 51/00 (2006.01) ,H01L 51/50 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42
specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
Applicants: KUBOTA, Hirofumi[JP/JP]; JP (UsOnly)
PIONEER CORPORATION[JP/JP]; 1-1, Shin-ogura, Saiwai-ku, Kawasaki-shi, Kanagawa 2120031, JP (AllExceptUS)
Inventors: KUBOTA, Hirofumi; JP
Agent: MIZUNO, Katsufumi; 721, Marunouchi-Nakadori Bldg. 2-3, Marunouchi 2-chome Chiyoda-ku, Tokyo 1000005, JP
Priority Data:
Title (EN) PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING THE SAME
(FR) ELÉMENT DE CONVERSION PHOTOÉLECTRIQUE ET PROCÉDÉ POUR SA FABRICATION
(JA) 光電変換素子及びその製造方法
Abstract:
(EN) Provided is a photoelectric conversion element which can exhibit a high photoelectric conversion efficiency by suppressing affects of impurities. The photoelectric conversion element includes: an anode; a cathode; a photoelectric conversion layer arranged between the anode and the cathode; and an electron hole buffer layer arranged between the anode and the photoelectric conversion layer.  The concentration of the sodium ion as impurities contained in the electron hole buffer layer is set to 100 ppm or below.  This suppresses the affect of the impurities to the photoelectric conversion and increases the photoelectric conversion efficiency.
(FR) La présente invention se rapporte à un élément de conversion photoélectrique qui peut fournir une efficacité de conversion photoélectrique élevée en supprimant les effets d'impuretés. L'élément de conversion photoélectrique comprend : une anode ; une cathode ; une couche de conversion photoélectrique placée entre l'anode et la cathode ; et une couche tampon pour trou d'électron placée entre l'anode et la couche de conversion photoélectrique. La concentration d'ions de sodium constituant les impuretés contenues dans la couche tampon pour trou d'électron est définie à 100 ppm ou moins. La solution selon l'invention supprime les effets des impuretés sur la conversion photoélectrique et augmente l'efficacité de la conversion photoélectrique.
(JA) 【課題】不純物の影響を抑制して、高い光電変換効率を発揮することのできる光電変換素子を提供する 【解決手段】 陽極と、陰極と、前記陽極と陰極の間に配置される光電変換層と、前記陽極と光電変換層の間に配置される正孔バッファ層と、を少なくとも含む光電変換素子において、前記正孔バッファ層に含まれる不純物としてのナトリウムイオン濃度が100ppm以下である構成とする。その結果、不純物が光電変換に及ぼす影響を抑制し、高い光電変換効率を得ることができる。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)