WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2010123045) ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER AND ELECTROPHOTOGRAPHIC APPARATUS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/123045    International Application No.:    PCT/JP2010/057106
Publication Date: 28.10.2010 International Filing Date: 15.04.2010
IPC:
G03G 5/08 (2006.01)
Applicants: CANON KABUSHIKI KAISHA [JP/JP]; 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 1468501 (JP) (For All Designated States Except US).
HOSOI, Kazuto [JP/JP]; (JP) (For US Only).
OHIRA, Jun [JP/JP]; (JP) (For US Only)
Inventors: HOSOI, Kazuto; (JP).
OHIRA, Jun; (JP)
Agent: OKABE, Masao; No. 602, Fuji Bldg., 2-3, Marunouchi 3-chome, Chiyoda-ku, Tokyo 1000005 (JP)
Priority Data:
2009-101836 20.04.2009 JP
2009-116021 12.05.2009 JP
2010-088797 07.04.2010 JP
Title (EN) ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER AND ELECTROPHOTOGRAPHIC APPARATUS
(FR) ÉLÉMENT PHOTOSENSIBLE ÉLECTROPHOTOGRAPHIQUE ET APPAREIL ÉLECTROPHOTOGRAPHIQUE
Abstract: front page image
(EN)An electrophotographic photosensitive member is disclosed which has a change layer consisting of five or more a-SiC intermediate layers, provided between an a-Si photoconductive layer and an a-SiC surface layer. Where two layers contiguous to each other in which C/(Si+C) is from 0.35 to 0.65 are selected from among the a-SiC intermediate layers included in the change layer, the rate of increase between the C/(Si+C) of an a-SiC intermediate layer on the photoconductive layer side and the C/(Si+C) of an a-SiC intermediate layer on the surface layer side (i.e., the rate of increase between layers) is 19% or less.
(FR)L'invention porte sur un élément photosensible électrophotographique qui a une couche à changement composée de cinq ou de plus de cinq couches intermédiaires a-SiC, disposées entre une couche photoconductrice a-SiC et une couche de surface a-SiC. Deux couches contiguës entre elles dans lesquelles C/(Si + C) va de 0,35 à 0,75 sont choisies parmi les couches intermédiaires a-SiC comprises dans la couche à changement, le taux d'augmentation entre le rapport C/(Si + C) d'une couche intermédiaire a-SiC sur le côté couche photoconductrice et le rapport C/(Si + C) d'une couche intermédiaire a-SiC sur le côté couche de surface (c'est-à-dire le taux d'augmentation entre les couches) est de 19 % ou moins.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)