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1. (WO2010123030) COMPOSITION FOR FORMING DOPED OR NON-DOPED ZINC OXIDE THIN FILM, AND METHOD FOR PRODUCING ZINC OXIDE THIN FILM USING SAME

Pub. No.:    WO/2010/123030    International Application No.:    PCT/JP2010/057071
Publication Date: Fri Oct 29 01:59:59 CEST 2010 International Filing Date: Thu Apr 22 01:59:59 CEST 2010
IPC: C01G 9/02
H01B 13/00
Applicants: TOSOH FINECHEM CORPORATION
東ソー・ファインケム株式会社
INABA, Koichiro
稲葉 孝一郎
TOYOTA, Kouji
豊田 浩司
HAGA, Kenichi
羽賀 健一
TOKUDOME, Kouichi
徳留 功一
Inventors: INABA, Koichiro
稲葉 孝一郎
TOYOTA, Kouji
豊田 浩司
HAGA, Kenichi
羽賀 健一
TOKUDOME, Kouichi
徳留 功一
Title: COMPOSITION FOR FORMING DOPED OR NON-DOPED ZINC OXIDE THIN FILM, AND METHOD FOR PRODUCING ZINC OXIDE THIN FILM USING SAME
Abstract:
Disclosed is a composition for forming a zinc oxide thin film, which contains an organic zinc compound as a starting material, is not ignitable, and can be easily handled. The composition for forming a zinc oxide thin film is capable of forming a transparent zinc oxide thin film which is not doped or doped with a group 3B element by being heated at 300˚C or less. Also disclosed is a method for obtaining a transparent zinc oxide thin film, which is not doped or doped with a group 3B element, using the composition. Specifically, the composition for forming a zinc oxide thin film contains a product which is obtained by partially hydrolyzing an organic zinc compound by adding water to the organic zinc compound or a solution of the organic zinc compound and a group 3B element compound. In cases when a group 3B element compound is contained, the molar ratio of the group 3B element compound to the organic zinc compound is within the range of 0.005-0.3. The composition is applied to a substrate surface and then heated, thereby forming a zinc oxide thin film which is doped with the group 3B element.