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1. (WO2010122985) POLISHING LIQUID FOR SEMICONDUCTOR SUBSTRATE AND METHOD FOR POLISHING SEMICONDUCTOR SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/122985    International Application No.:    PCT/JP2010/056948
Publication Date: 28.10.2010 International Filing Date: 19.04.2010
IPC:
H01L 21/304 (2006.01), B24B 37/04 (2012.01), C09K 3/14 (2006.01)
Applicants: HITACHI CHEMICAL COMPANY, LTD. [JP/JP]; 1-1, Nishi-Shinjuku 2-chome, Shinjuku-ku, Tokyo 1630449 (JP) (For All Designated States Except US).
NOMURA Yutaka [JP/JP]; (JP) (For US Only).
NOBE Shigeru [JP/JP]; (JP) (For US Only).
AMANOKURA Jin [JP/JP]; (JP) (For US Only).
KOYAMA Naoyuki [JP/JP]; (JP) (For US Only).
TOBITA Ayako [JP/JP]; (JP) (For US Only)
Inventors: NOMURA Yutaka; (JP).
NOBE Shigeru; (JP).
AMANOKURA Jin; (JP).
KOYAMA Naoyuki; (JP).
TOBITA Ayako; (JP)
Agent: HASEGAWA Yoshiki; SOEI PATENT AND LAW FIRM, Marunouchi MY PLAZA (Meiji Yasuda Life Bldg.) 9th fl., 1-1, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1000005 (JP)
Priority Data:
2009-101919 20.04.2009 JP
2009-101920 20.04.2009 JP
2009-102919 21.04.2009 JP
2009-173334 24.07.2009 JP
2009-173352 24.07.2009 JP
2009-173355 24.07.2009 JP
Title (EN) POLISHING LIQUID FOR SEMICONDUCTOR SUBSTRATE AND METHOD FOR POLISHING SEMICONDUCTOR SUBSTRATE
(FR) LIQUIDE DE POLISSAGE POUR SUBSTRAT SEMI-CONDUCTEUR ET PROCÉDÉ DE POLISSAGE D'UN SUBSTRAT SEMI-CONDUCTEUR
(JA) 半導体基板用研磨液及び半導体基板の研磨方法
Abstract: front page image
(EN)Disclosed is a polishing liquid for a semiconductor substrate, which contains polishing particles, 1,2,4-triazole and a basic compound. The basic compound is a nitrogen-containing basic compound or an inorganic basic compound, and is contained in the polishing liquid in an amount of not less than 0.1% by mass. The basic compound has a pH of not less than 9 but not more than 12.
(FR)L'invention porte sur un liquide de polissage pour un substrat semi-conducteur, qui contient des particules de polissage, du 1,2,4-triazole et un composé basique. Le composé basique est un composé basique contenant de l'azote ou un composé basique inorganique, et est contenu dans le liquide de polissage dans une quantité de pas moins de 0,1% en masse. Le composé basique a un pH de pas moins de 9 mais de pas plus de 12.
(JA) 本発明は、研磨粒子と、1,2,4-トリアゾールと、塩基性化合物とを含有し、塩基性化合物が、含窒素塩基性化合物又は無機塩基性化合物であり、塩基性化合物の含有量が0.1質量%以上であり、pHが9以上12以下である、半導体基板用研磨液に関する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)