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Pub. No.:    WO/2010/122928    International Application No.:    PCT/JP2010/056653
Publication Date: 28.10.2010 International Filing Date: 14.04.2010
C01B 31/04 (2006.01), C01B 31/36 (2006.01)
Applicants: KYUSHU INSTITUTE OF TECHNOLOGY [JP/JP]; 1-1, Sensui-cho, Tobata-ku, Kitakyushu-shi, Fukuoka 8048550 (JP) (For All Designated States Except US).
NAKAO, Motoi [JP/JP]; (JP) (For US Only).
TANEHIRA, Takafumi [JP/JP]; (JP) (For US Only)
Inventors: NAKAO, Motoi; (JP).
TANEHIRA, Takafumi; (JP)
Agent: MAEDA, Sumihiro; 329-1, Arahata Tokorozawa-shi, Saitama 3591133 (JP)
Priority Data:
2009-107196 25.04.2009 JP
(JA) グラフェン膜の作製方法
Abstract: front page image
(EN)Disclosed is a method for forming a graphene film, wherein a film of a metal M reactive with a carbide, such as an Si film, which is formed on an insulating layer that is formed from a substance not reactive with carbon, such as an Si/SiO2 insulating layer, is carbonized with a hydrocarbon gas such as an ethylene gas, thereby modifying the Si film into a film of SiC that is a reaction product, and a graphene film is formed on the SiC film. By using a material/process based on an Si substrate or the like, a high quality graphene film can be produced. A substrate comprising the graphene film is applicable to many devices.
(FR)L'invention porte sur un procédé de formation d'un film de graphène, suivant lequel un film d'un métal M apte à réagir avec un carbure, tel qu'un film de Si, qui est formé sur une couche isolante qui est formée à partir d'une substance ne réagissant pas avec le carbone, telle qu'une couche isolante de Si/SiO2, est carbonisé par un hydrocarbure gazeux tel que l'éthylène gazeux, permettant ainsi de modifier le film de Si en un film de SiC qui est un produit de réaction, et un film de graphène est formé sur le film de SiC. A l'aide d'une matière/d'un procédé basé sur un substrat de Si ou similaire, un film de graphène de haute qualité peut être obtenu. Un substrat comprenant le film de graphène est applicable à de nombreux dispositifs.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)